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Ultrathin PVK charge control layer for advanced manipulation of efficient giant [email protected]/ZnS quantum dot light-emitting diodes
Organic Electronics ( IF 3.2 ) Pub Date : 2018-09-27 , DOI: 10.1016/j.orgel.2018.09.036
Hoang-Tuan Vu , Chun-Yuan Huang , Hsin-Chieh Yu , Yan-Kuin Su

An efficient green quantum dot light-emitting diode (QLED) consisted of giant [email protected]/ZnS quantum dots (QDs) with the gradient composition was reported. The electroluminescence (EL) enhancement was demonstrated by utilizing a poly(9-vinlycarbazole) (PVK) charge control layer (CCL) to regulate the injection charge inside QD emitters. With lower electron mobility and high triplet energy for the possibility of efficient resonance energy transfer, the ultrathin PVK CCL possessed the capability of increasing the radiative recombination of excitons by reducing the predominant electrons, adjusting the charge injection rate, and thus suppressing QD charging effect. As a consequence, the QLED with a CCL demonstrated excellent performance (external quantum efficiency (EQE) ∼ 4.3% and maximum luminance (Lmax) ∼41900 cd/m2) superior to that of previously published "Type-II″ devices with similar organic/polymer carrier transporting materials. Furthermore, neither noticeable increase of turn-on voltage nor photon emission from PVK were observed after inserting this PVK CCL in right position. This demonstration creates a new route to design impact QLED architecture for next generation displays.



中文翻译:

超薄PVK电荷控制层,用于高效操纵[受电子邮件保护] / ZnS量子点发光二极管

报道了一种高效的绿色量子点发光二极管(QLED),该发光二极管由具有梯度成分的巨型[受电子邮件保护] / ZnS量子点(QD)组成。通过利用聚(9-乙烯基咔唑)(PVK)电荷控制层(CCL)调节QD发射极内部的注入电荷,证明了电致发光(EL)增强。超薄PVK CCL具有较低的电子迁移率和较高的三重态能量,可实现有效的共振能量转移,它具有通过减少主要电子,调节电荷注入速率并从而抑制QD充电效应来增加激子的辐射复合的能力。结果,具有CCL的QLED表现出出色的性能(外部量子效率(EQE)〜4.3%,最大亮度(L max)〜41900 cd / m 2)优于以前发布的带有类似有机/聚合物载流子传输材料的“ II型”器件,此外,插入该PVK后,未观察到PVK的开启电压显着增加或光子发射CCL处于正确位置此演示为为下一代显示器设计具有影响力的QLED体系结构开辟了一条新途径。

更新日期:2018-09-27
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