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Silicon-Phosphorene Nanocavity-Enhanced Optical Emission at Telecommunications Wavelengths
Nano Letters ( IF 10.8 ) Pub Date : 2018-09-25 00:00:00 , DOI: 10.1021/acs.nanolett.8b03037
Chad Husko 1 , Joohoon Kang 2 , Gregory Moille 3 , Joshua D. Wood 2 , Zheng Han 3 , David Gosztola 1 , Xuedan Ma 1 , Sylvain Combrié 4 , Alfredo De Rossi 4 , Mark C. Hersam 2 , Xavier Checoury 3 , Jeffrey R. Guest 1
Affiliation  

Generating and amplifying light in silicon (Si) continues to attract significant attention due to the possibility of integrating optical and electronic components in a single material platform. Unfortunately, silicon is an indirect band gap material and therefore an inefficient emitter of light. With the rise of integrated photonics, the search for silicon-based light sources has evolved from a scientific quest to a major technological bottleneck for scalable, CMOS-compatible, light sources. Recently, emerging two-dimensional materials have opened the prospect of tailoring material properties based on atomic layers. Few-layer phosphorene, which is isolated through exfoliation from black phosphorus (BP), is a great candidate to partner with silicon due to its layer-tunable direct band gap in the near-infrared where silicon is transparent. Here we demonstrate a hybrid silicon optical emitter composed of few-layer phosphorene nanomaterial flakes coupled to silicon photonic crystal resonators. We show single-mode emission in the telecommunications band of 1.55 μm (Eg = 0.8 eV) under continuous wave optical excitation at room temperature. The solution-processed few-layer BP flakes enable tunable emission across a broad range of wavelengths and the simultaneous creation of multiple devices. Our work highlights the versatility of the Si-BP material platform for creating optically active devices in integrated silicon chips.

中文翻译:

硅磷光纳米腔增强的电信波长光发射

由于可能在单个材料平台中集成光学和电子组件,因此在硅(Si)中生成和放大光继续受到广泛关注。不幸的是,硅是一种间接的带隙材料,因此是低效的发光体。随着集成光子技术的兴起,对基于硅的光源的搜索已从科学探索发展为可扩展,兼容CMOS的光源的主要技术瓶颈。近来,新兴的二维材料为基于原子层调整材料特性开辟了前景。通过剥落与黑磷(BP)隔离的少层磷烯是与硅配合的绝佳选择,这是因为其在硅透明的近红外层中具有可调节的直接带隙。在这里,我们演示了由耦合到硅光子晶体谐振器的几层磷纳米材料薄片组成的混合硅光​​发射器。我们显示了1.55μm的电信频段中的单模发射(E g = 0.8 eV),在室温下连续波光激发下。经过固溶处理的几层BP薄片可在广泛的波长范围内进行可调发射,并同时创建多个设备。我们的工作强调了Si-BP材料平台的多功能性,该平台可在集成硅芯片中创建光学有源器件。
更新日期:2018-09-25
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