The development of printable and air-stable unipolar n-type semiconductors remains a critical issue in the field of organic electronics in view of n-type transistors being indispensable components in the manufacture of low-power-consumption complementary (CMOS type) integrated circuits. In this work, we report on two dicyanomethylene-substituted diketopyrrolopyrrole derivatives with different alkyl side chains (DCM-DPP-C₁₃ and DCM-DPP-C₁₆) for n-type transistors. Compared with DCM-DPP-C_16, the side chain branching point in DCM-DPP-C₁₃ was moved further away from the conjugated backbone. Both materials showed promising electron mobility above 0.1 cm²/VS in air with remarkably low threshold voltages (−3 V – 2 V) on spin-coated bottom-contact bottom-gated devices on silicon substrates. Contrary to our original expectation, the average electron mobility of DCM-DPP-C₁₆ (0.2 cm²/VS) was higher than that of DCM-DPP-C₁₃ (0.12 cm²/VS) due to the bigger crystalline domains in the thin film of the former compound. We investigated the inkjet printability of these two compounds as well, and bottom-contact top-gated transistors were successfully fabricated on flexible PET substrates. Widely used Cytop was employed as the gate dielectric. Ag gate electrodes were readily inkjet printed on the gate dielectric by using a thin layer of Nafion as an adhesion promoter. DCM-DPP-C₁₆ demonstrated an excellent inkjet-ability with good uniformity and reproducibility. An average electron mobility around 0.1 cm²/VS was achieved in air. This is an important step toward the fabrication of large-area organic CMOS logic circuits with low cost.

考虑到n型晶体管是制造低功耗互补（CMOS型）集成电路中必不可少的组件，可印刷且空气稳定的单极n型半导体的开发仍然是有机电子领域中的关键问题。在这项工作中，我们报告了两种用于n型晶体管的具有不同烷基侧链的二氰基亚甲基取代的二酮吡咯并并吡咯衍生物（DCM-DPP-C ₁₃和DCM-DPP-C ₁₆）。用DCM-DPP-C相比_16，侧链在DCM-DPP-C分支点₁₃被移动了由共轭主链更远。两种材料都显示出在0.1 cm ²以上的有希望的电子迁移率空气中的/ VS，在硅基板上的旋涂底接触底栅器件上的阈值电压（-3 V – 2 V）非常低。与我们最初的预期相反，DCM-DPP-C ₁₆（0.2 cm ² / VS）的平均电子迁移率高于DCM-DPP-C ₁₃（0.12 cm ² / VS）的平均电子迁移率，因为前化合物的薄膜。我们也研究了这两种化合物的喷墨可印刷性，并且在柔性PET基板上成功制造了底部接触的顶部栅极晶体管。广泛使用的Cytop被用作栅极电介质。通过使用Nafion薄层作为粘合促进剂，可以轻松地将Ag栅电极喷墨印刷在栅极电介质上。DCM-DPP-C ₁₆具有良好的均匀性和再现性的优异喷墨能力。在空气中实现了约0.1 cm ² / VS的平均电子迁移率。这是朝着低成本制造大面积有机CMOS逻辑电路迈出的重要一步。