Bending straight Ag nanorods (AgNRs) into V-shaped structures can generate a higher surface-enhanced Raman scattering (SERS) performance. Numerical simulations showed that V-shaped AgNRs with a total length between 300 nm and 800 nm were more sensitive than equal-length straight AgNRs under a 785 nm laser in most cases. It was found that at a laser wavelength between 500 nm and 1000 nm, the Raman enhancement factor (EF) of a V-shaped AgNR's 3rd plasmon mode was not only optimal among the other major plasmon modes, but also outperformed the plasmon modes of straight AgNRs. Besides, a linear relationship between the resonance wavelength of the V-shaped AgNR's 3rd mode and its length was observed both numerically and experimentally, which was beneficial for the optimization of SERS substrates. Under 785 nm laser excitation, V-shaped AgNR substrates with a single arm length between 330 nm and 340 nm possessed the highest SERS efficiency. This work took AgNR array substrates one step closer to practical applications.

中文翻译：

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V型Ag纳米棒作为高性能SERS衬底的制备和模拟†

将笔直的Ag纳米棒（AgNR）弯曲成V形结构可以产生更高的表面增强拉曼散射（SERS）性能。数值模拟表明，在大多数情况下，在785 nm激光下，总长度在300 nm至800 nm之间的V型AgNR比同等长度的纯AgNR更敏感。发现在500 nm至1000 nm的激光波长下，V形AgNR的第三等离激元模的拉曼增强因子（EF）不仅在其他主要等离激元模中是最佳的，而且还超过了直线型AgNRs。此外，在数值上和实验上都观察到了V型AgNR的3阶共振波长与其长度之间的线性关系，这对SERS基板的优化是有利的。在785 nm激光激发下，单臂长度在330 nm至340 nm之间的V形AgNR基板具有最高的SERS效率。这项工作使AgNR阵列基板更接近实际应用。