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Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire
ACS Nano ( IF 17.1 ) Pub Date : 2018-09-20 00:00:00 , DOI: 10.1021/acsnano.8b04612
Kenshiro Suenaga 1 , Hyun Goo Ji 1 , Yung-Chang Lin 2 , Tom Vincent 3 , Mina Maruyama 4 , Adha Sukma Aji 1 , Yoshihiro Shiratsuchi 1 , Dong Ding 1 , Kenji Kawahara 5 , Susumu Okada 4 , Vishal Panchal 3 , Olga Kazakova 3 , Hiroki Hibino 6 , Kazu Suenaga 2 , Hiroki Ago 1, 2, 5
Affiliation  

Aligned growth of transition metal dichalcogenides and related two-dimensional (2D) materials is essential for the synthesis of high-quality 2D films due to effective stitching of merging grains. Here, we demonstrate the controlled growth of highly aligned molybdenum disulfide (MoS2) on c-plane sapphire with two distinct orientations, which are highly controlled by tuning sulfur concentration. We found that the size of the aligned MoS2 grains is smaller and their photoluminescence is weaker as compared with those of the randomly oriented grains, signifying enhanced MoS2–substrate interaction in the aligned grains. This interaction induces strain in the aligned MoS2, which can be recognized from their high susceptibility to air oxidation. The surface-mediated MoS2 growth on sapphire was further developed to the rational synthesis of an in-plane MoS2–graphene heterostructure connected with the predefined orientation. The in-plane epitaxy was observed by low-energy electron microscopy. Transmission electron microscopy and scanning transmission electron microscopy suggest the alignment of a zigzag edge of MoS2 parallel to a zigzag edge of the neighboring graphene. Moreover, better electrical contact to MoS2 was obtained by the monolayer graphene compared with a conventional metal electrode. Our findings deepen the understanding of the chemical vapor deposition growth of 2D materials and also contribute to the tailored synthesis as well as applications of advanced 2D heterostructures.

中文翻译:

蓝宝石上石墨烯的表面介导的单层MoS 2和平面异质结构的定向生长

过渡金属二卤化物和相关二维(2D)材料的对齐生长是由于合并晶粒的有效缝合而对于合成高质量2D薄膜必不可少的。在这里,我们演示了在c平面蓝宝石上具有两个不同方向的高度对齐的二硫化钼(MoS 2)的受控生长,这是通过调节硫浓度来高度控制的。我们发现,与随机取向的晶粒相比,取向的MoS 2晶粒尺寸较小,光致发光较弱,这表明取向的晶粒中MoS 2-底物相互作用增强。这种相互作用在对准的MoS 2中引起应变,从其对空气氧化的高度敏感性中可以看出。蓝宝石表面介导的MoS 2的生长被进一步发展为合理合成平面内的MoS 2-石墨烯异质结构,并具有预定的取向。通过低能电子显微镜观察到面内外延。透射电子显微镜和扫描透射电子显微镜表明,MoS 2的锯齿形边缘与相邻石墨烯的锯齿形边缘平行。此外,与MoS 2的电接触更好与传统的金属电极相比,通过单层石墨烯获得的H 2 O 3。我们的发现加深了对2D材料化学气相沉积生长的理解,也有助于量身定制的合成方法以及高级2D异质结构的应用。
更新日期:2018-09-20
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