Abstract Ag-added Ge2Sb2Te5 thin films were prepared by a pulsed-DC co-magnetron sputtering process using Ge2Sb2Te5 and Ag targets. The effect of variation in Ag content through variable power on Ag target was studied on the microstructural and thermoelectric properties of as-deposited and fast annealed thin films at 400 °C in a vacuum. It is found that Ag addition induces enhancement in conductivity. When the power on Ag target is exceeded to a critical power, Ag8GeTe6 phase formation occurs mixed with Ge2Sb2Te5 cubic structure which limits the thermoelectric performance. Best conditions provide the films having a lowest electrical resistivity as 0.98 × 10−4 Ω cm and the maximum power factor as 5.83 × 10−3 W m−1 K−2.

中文翻译：

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Ag 混合在热电 Ge2Sb2Te5 薄膜中的影响

摘要 采用Ge2Sb2Te5 和Ag 靶材，通过脉冲直流共磁控溅射工艺制备了添加Ag 的Ge2Sb2Te5 薄膜。在真空中 400 °C 下，研究了通过可变功率改变 Ag 含量对 Ag 靶材的微观结构和热电性能的影响。发现Ag的添加引起电导率的增强。当 Ag 靶上的功率超过临界功率时，会形成 Ag8GeTe6 相与 Ge2Sb2Te5 立方结构混合，从而限制了热电性能。最佳条件提供具有最低电阻率为 0.98 × 10-4 Ω cm 和最大功率因数为 5.83 × 10-3 W m-1 K-2 的薄膜。