Resistive switching random-access memory (ReRAM) is one of the most promising technologies for non-volatile memories. Thanks to the low power and high speed operation, the high density CMOS-compatible integration, and the high cycling endurance, the ReRAM technology is becoming a strong candidate for high-density storage arrays and novel in-memory computing systems. However, ReRAM suffers from cycle-to-cycle switching variability and noise-induced resistance fluctuations, leading to insufficient read margin between the programmed resistive states. To overcome the existing challenges, a deep understanding of the roles of the ReRAM materials in the device characteristics is essential. To better understand the role of the switching layer material in controlling ReRAM performance and reliability, this work compares SiO_x- and HfO₂-based ReRAM at fixed geometry and electrode materials. Ti/HfO₂/C and Ti/SiO_x/C devices are compared from the point of view of the forming process, switching characteristics, resistance variability, and temperature stability of the programmed states. The results show clear similarities for the two different oxides, including a similar resistance window and stability at high temperatures, thus suggesting a common nature of the switching mechanism, highlighting the importance of the electrodes. On the other hand, the oxide materials play a clear role in the forming, breakdown, and variability characteristics. The discrimination between the role of the oxide and the electrode materials in the ReRAM allows ReRAM optimization via materials engineering to be better explored for future memory and computing applications.

中文翻译：

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氧化物和电极材料对氧化物ReRAM器件开关特性的影响

电阻切换随机存取存储器（ReRAM）是非易失性存储器最有前途的技术之一。由于低功耗和高速运行，高密度CMOS兼容的集成以及高循环耐久性，ReRAM技术正成为高密度存储阵列和新型内存计算系统的强大候选者。但是，ReRAM具有周期间切换变化和噪声引起的电阻波动的特性，从而导致编程的电阻状态之间的读取余量不足。为了克服现有的挑战，必须深刻了解ReRAM材料在器件特性中的作用。为了更好地了解开关层材料在控制ReRAM性能和可靠性方面的作用，本文比较了SiO _x-和基于HfO ₂的ReRAM具有固定的几何形状和电极材料。从成形过程，开关特性，电阻变化和编程状态的温度稳定性的角度比较了Ti / HfO ₂ / C和Ti / SiO _x / C器件。结果表明两种不同氧化物具有明显的相似性，包括相似的电阻窗口和高温下的稳定性，因此表明了开关机制的共同性质，突出了电​​极的重要性。另一方面，氧化物材料在形成，击穿和可变性特征中起着明显的作用。通过区分氧化物和电极材料在ReRAM中的作用，可以通过以下方式优化ReRAM： 未来的内存和计算应用将更好地探索材料工程。