Currently, nitridation of phosphors provides an enormous inspiration for phosphor designing. In this paper, a nitridation process by means of substituting Al³⁺O²⁻ with Si⁴⁺N³⁻ in initial Sr₃Al₂O₅Cl₂:Eu²⁺ system is implemented. The phase purity is confirmed by X‐ray diffraction. The corresponding photoluminescence properties are recorded and analyzed by the excitation and emission spectra. Interestingly, new blue emission bands emerge in the range of 400–500 nm and the intensity increases with the increasing of substitution concentration. It is verified that the new emission band is derived from the residence of Eu²⁺ ions in the interstitial sites. The crystal structure refinement, transmission electron microscopy, and solid‐state nuclear magnetic resonance spectroscopy are exploited to analyze the color‐tunable luminescence mechanisms induced by the structural variation. Moreover, the thermal stability is characterized by the temperature‐dependent spectra. Attributed to the enhancement of lattice rigidity, the serious thermal quenching behavior is improved. Finally, the electroluminescence performance is measured for the fabricated white light‐emitting diodes (LEDs). By combining 370 nm ultraviolet LED chips, CaAlSiN₃:Eu²⁺ and Sr₃Al₂O₅Cl₂:Eu²⁺ phosphors, an ideal warm‐white emitting LED is successfully fabricated with the color rendering index = 92, color temperature = 3476 K, and color coordinate x = 0.37, y = 0.34.

中文翻译：

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基于间隙位置中Eu2 +在Sr3Al2-xSixO5-xNxCl2中的发光调整的新见解（x = 0-0.4）

当前，磷光体的氮化为磷光体设计提供了巨大的启发。在本文中，通过取代的手段在氮化处理的Al ³⁺  ö ^2-有Si ⁴⁺  Ñ ^3-在初始的Sr ₃的Al ₂ ø ₅氯₂：Eu的²⁺系统已实现。相纯度通过X射线衍射确定。记录相应的光致发光特性，并通过激发和发射光谱对其进行分析。有趣的是，新的蓝色发射带出现在400-500 nm范围内，并且强度随着取代浓度的增加而增加。验证了新的发射带是由Eu ²⁺的居留引起的间隙位置的离子。利用晶体结构的细化，透射电子显微镜和固态核磁共振波谱来分析由结构变化引起的颜色可调的发光机理。此外，热稳定性的特征在于与温度有关的光谱。由于晶格刚度的提高，严重的热淬火行为得以改善。最后，测量了制造的白色发光二极管（LED）的电致发光性能。通过组合370 nm紫外线LED芯片，CaAlSiN ₃：Eu ²⁺和Sr ₃ Al ₂ O ₅ Cl ₂：Eu ²⁺荧光粉，成功制作了理想的暖白色发光LED，其显色指数= 92，色温= 3476 K，色坐标x = 0.37，y = 0.34。