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Impact of 2‐Ethylhexyl Stereoisomers on the Electrical Performance of Single‐Crystal Field‐Effect Transistors
Advanced Materials ( IF 29.4 ) Pub Date : 2018-09-14 , DOI: 10.1002/adma.201804032
Tao He 1 , Pawaret Leowanawat 1 , Christian Burschka 1 , Vladimir Stepanenko 1 , Matthias Stolte 1 , Frank Würthner 1
Affiliation  

Many organic semiconductors (OSCs) inherit chiral alkyl chains, which ensure the desirable high solubility for solution‐processing but may also lead to disorder, inhomogeneous film‐formation, as well as interfacial defects due to the presence of mixtures of stereoisomers or diastereomers, which impair their peak performance. Here, single‐crystal field‐effect transistors (SCFETs) of a diketopyrrolopyrrole‐based organic semiconductor with chiral 2‐ethylhexyl substituents by sublimation in air and organic ribbon mask method are fabricated. Devices of the mesomer (R/S), both enantiomers (R/R, S/S), as well as mixtures of these three stereoisomers measured under ambient conditions exhibit all appreciable p‐channel charge carrier mobilities of > 0.1 cm2 V−1 s−1 despite different packing arrangement in the R/S, R/R (or S/S), and racemate crystal structures. These results suggest a surprising tolerance for isomeric impurities. The highest literature‐reported p‐channel mobility so far for a diketopyrrolopyrrole‐based OSC of 3.4 cm2 V−1 s−1 (Ion/Ioff of 1 × 106) is, however, only obtained for the pure R/S mesomer, illustrating the inherent potential of stereochemical purity. These results on SCFETs are further substantiated by studies on organic thin‐film transistors (OTFTs) of pure and mixed thin films of the different stereoisomers.

中文翻译:

2-乙基己基立体异构体对单晶场效应晶体管电性能的影响

许多有机半导体(OSC)继承了手性烷基链,这些烷基链确保了溶液加工所需的高溶解度,但由于存在立体异构体或非对映异构体的混合物,也可能导致无序,不均匀的成膜以及界面缺陷。损害其最佳性能。在这里,通过空气升华和有机带掩膜法,制备了具有手性2-乙基己基取代基的基于二酮吡咯并吡咯的有机半导体的单晶场效应晶体管(SCFET)。内消旋体(的设备- [R /小号),两种对映体(- [R / [R 小号/小号),以及在环境条件下测得的这三种立体异构体混合物表现出>0.1厘米的所有可察觉的p沟道载流子迁移2 V -1小号-1尽管在不同的包装排列- [R /小号- [R / [R (或小号/ S)和消旋体晶体结构。这些结果表明对异构体杂质具有令人惊讶的耐受性。迄今为止,文献报道的基于二酮吡咯并吡咯的OSC为3.4 cm 2 V -1 s -1I on / I off然而,仅对于纯的R / S异构体获得了1×10 6的α,说明了立体化学纯度的内在潜力。关于SCFET的这些结果通过对不同立体异构体的纯薄膜和混合薄膜的有机薄膜晶体管(OTFT)的研究得到了进一步证实。
更新日期:2018-09-14
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