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Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene
Chemical Reviews ( IF 62.1 ) Pub Date : 2018-09-12 00:00:00 , DOI: 10.1021/acs.chemrev.8b00325
Li Lin 1 , Bing Deng 1 , Jingyu Sun 2, 3 , Hailin Peng 1, 4 , Zhongfan Liu 1, 4
Affiliation  

Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.

中文翻译:

弥合石墨烯化学气相沉积生长中现实与理想之间的鸿沟

理想状态的石墨烯是一种二维(2D)材料,由以六边形晶格排列的单层碳原子组成。自2004年首次剥离以来,理想石墨烯的形态,物理,机械和光学特性丰富,激发了巨大的科学和工业兴趣。反过来,以可靠,可控制和可扩展的方式生产石墨烯变得非常重要。使我们更接近石墨烯的实际应用。为此,化学气相沉积(CVD)为合成大面积,均匀且高质量的石墨烯薄膜提供了诱人的机会。但是,与理想的石墨烯2D结构有很大不同,实际上,目前可用的CVD生长的石墨烯薄膜仍遭受固有缺陷晶界的影响,表面污染和皱纹,以及低的生长速度和不可避免的转移的要求。显然,在CVD衍生的石墨烯(尤其是在工业生产中)的现实与具有出色性能的理想石墨烯之间仍然存在差距。这篇综述将重点介绍CVD生产石墨烯的最新进展和策略,以解决这些问题以弥合巨大的鸿沟。我们从有关纳米级碳同素异形体合成的简要背景信息开始,然后讨论石墨烯的基本生长机理和CVD生长动力学。然后,我们讨论了在域衬底尺寸,清洁度,平坦度,生长速率,可扩展性以及石墨烯在功能性基底上的直接生长方面,完善CVD衍生的石墨烯质量的策略。最后,
更新日期:2018-09-12
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