Neuromorphic hardware systems that simulate functions of biological brain synapses have been widely investigated due to their possible application in brain‐inspired computing. We hereby report on a novel electrochemical state machine based on Zn:CdS thin films. The memory switching mechanism involves the cation exchange of Cu²⁺ and Zn²⁺ acting as inorganic “neurotransmitters”. Similarly to the synapse‐neurotransmitter interactions, Cu²⁺ ions increase the conductivity and the electrocatalytic activity of Zn:CdS towards the ferrocene/ferrocenium redox process. The cationic substitution of Zn²⁺ by Cu²⁺ in the film has shown significant changes in the electrochemical characteristic of the device. Such effects have been investigated with both alternated current (impedance) and direct current (voltammetry and I vs V) measurements. The cation exchange mechanism allows to write and store an electrochemical information into the device. Such information can be gradually erased by exchanging the absorbed Cu²⁺ ions with Zn²⁺. By means of a timed soaking, of the active area, with Cu²⁺ and Zn²⁺ diethyldithiocarbamates, the device can be driven through multiple conduction states, making it suitable for applications in artificial synapses research and memory storage systems.

中文翻译：

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Zn：CdS薄膜中基于Cu2 + / Zn2 +阳离子交换的突触电化学忆阻器

由于模拟神经系统硬件系统可能在脑启发计算中的应用，因此已经广泛研究了模拟神经系统神经突触功能的神经形态硬件系统。我们在此报告一种基于Zn：CdS薄膜的新型电化学状态机。存储器切换机制涉及充当无机“神经递质”的Cu ²⁺和Zn ²⁺的阳离子交换。与突触-神经递质相互作用相似，Cu ²⁺离子增加了Zn：CdS对二茂铁/二茂铁氧化还原过程的电导率和电催化活性。Zn ²⁺被Cu ²⁺阳离子取代薄膜中的硫已显示出装置的电化学特性的显着变化。已经通过交流电（阻抗）和直流电（伏安法以及I vs V）测量研究了这种影响。阳离子交换机制允许将电化学信息写入并存储到设备中。通过将吸收的Cu ²⁺离子与Zn ²⁺交换，可以逐渐消除这种信息。通过在活性区域中定时浸入Cu ²⁺和Zn ²⁺二乙基二硫代氨基甲酸酯，可以通过多种导通状态驱动该器件，使其适用于人工突触研究和存储系统。