The electrical conductivity and charge transfer resistance (R_ct) of reduced graphene oxide (rGO) with the addition of copper are reported. The samples of rGO with copper addition were successfully synthesized via in situ chemical exfoliation using a microwave-assisted technique. Annealing was performed at various temperatures to determine the optimal annealing temperature for the sample with the best electrical conductivity performance. The resulting samples were characterized using attenuated total reflectance-Fourier transform infrared (ATR-FTIR) characterization, X-ray diffraction (XRD), Raman spectrometry, energy dispersive X-ray (EDX) spectrometry, scanning electron microscopy (SEM), four-point probe, and electrochemical impedance spectroscopy (EIS). The highest conductivity value of 24.85 S cm⁻¹ was obtained for the rGO sample with addition of 1 wt% copper and annealing treatment at 300 °C for 45 minutes. The electrochemical properties of the samples were characterized using electrochemical impedance spectroscopy (EIS), resulting in a charge transfer resistance (R_ct) value of 3.86 Ω for sample B with the addition of 1 wt% copper. A possible reaction mechanism and explanations for the influence of Cu, Cu₂O, and CuO on the electrical conductivity and charge transfer resistance value of rGO are also described in this report.

中文翻译：

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铜的添加对还原氧化石墨烯（rGO）的电导率和电荷转移电阻的影响

报告了还原性氧化石墨烯（rGO）的电导率和电荷转移电阻（R _ct），其中添加了铜。通过原位成功合成了添加了铜的rGO样品使用微波辅助技术进行化学剥离。在各种温度下进行退火，以确定具有最佳导电性能的样品的最佳退火温度。使用衰减全反射-傅立叶变换红外（ATR-FTIR）表征，X射线衍射（XRD），拉曼光谱，能量色散X射线（EDX）光谱，扫描电子显微镜（SEM），四点探针和电化学阻抗谱（EIS）。最高电导率值为24.85 S cm ^-1对于rGO样品，添加了1 wt％的铜，并在300°C下退火45分钟，得到的样品的Si含量为50％。使用电化学阻抗谱（EIS）对样品的电化学性质进行表征，在添加1 wt％的铜的情况下，样品B的电荷转移电阻（R _ct）值为3.86Ω。此报告中还描述了可能的反应机理以及对Cu，Cu ₂ O和CuO对rGO的电导率和电荷转移电阻值的影响的解释。