The gate dielectric layer is an essential element of field‐effect transistors (FETs), large area integrated circuits, and various application electronics. Beyond basic insulation between the semiconductor layer and gate electrode, FET performance largely depends on the capacitance of the chosen insulator layer properties. Recent functional devices developments require new functionalities, such as high mechanical flexibility and stretchability in addition to basic insulating and physical properties. This review focuses on recent developments of high‐capacitance polymer gate dielectric materials and their application for low‐voltage flexible FETs. The fundamental principles and components of transistors are discussed briefly, then the underlying concepts for gate dielectrics and the mechanisms for polymer dielectric properties, such as capacitance control, leakage current formation in dielectric polymer films, and patternability, are described. Strategic approaches to achieve high capacitance based on low‐k dielectric materials, and the development and use of high‐capacitance polymers and hybrid polymer gate dielectrics in the context of emerging transistors on flexible substrates are also discussed.

中文翻译：

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用于柔性低压晶体管的高电容聚合物栅极电介质的最新进展

栅极介电层是场效应晶体管（FET），大面积集成电路和各种应用电子设备的基本元素。除了半导体层和栅电极之间的基本绝缘之外，FET性能在很大程度上取决于所选绝缘层属性的电容。最近的功能性设备开发除了基本的绝缘和物理特性外，还要求新的功能，例如高机械柔韧性和可拉伸性。这篇综述着重于高电容聚合物栅极电介质材料的最新发展及其在低压柔性FET中的应用。简要讨论了晶体管的基本原理和组件，然后介绍了栅极电介质的基本概念以及聚合物电介质特性的机制，描述了诸如电容控制，在介电聚合物膜中形成泄漏电流以及可图案化性等。基于低电容实现高电容的战略方法还讨论了k介电材料，以及在柔性基板上新兴晶体管的背景下高电容聚合物和混合聚合物栅极电介质的开发和使用。