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Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells
Solar Energy Materials and Solar Cells ( IF 6.9 ) Pub Date : 2019-01-01 , DOI: 10.1016/j.solmat.2018.07.030
Magnus C. Wagener , Denise Montesdeoca , Qi Lu , Andrew R.J. Marshall , Anthony Krier , J.R. Botha , Peter J. Carrington

Abstract The capture cross-section, intersubband optical cross-section and non-radiative emission rates related to localized hole states are obtained for p-i-n solar cells containing GaSb/GaAs quantum rings embedded within the i-region of the device. The technique developed uses the intraband photoemission current to probe the charge state of the nanostructures during two-color excitation. Analysis of the excitation power dependence revealed a non-radiative hole capture lifetime of 12 ns under low excitation conditions, with high injection leading to the saturation of the hole occupancy within the quantum-rings. The decay characteristics of the optical hole emission current has also been exploited to determine the spectral and temperature dependence of the radiative and non-radiative hole escape mechanisms from the quantum-rings.

中文翻译:

II型GaSb/GaAs量子环太阳能电池的空穴捕获和发射动力学

摘要 获得包含嵌入器件 i 区的 GaSb/GaAs 量子环的 pin 太阳能电池的捕获截面、子带间光学截面和与局部空穴态相关的非辐射发射率。开发的技术使用带内光电发射电流来探测双色激发期间纳米结构的电荷状态。对激发功率依赖性的分析表明,在低激发条件下,非辐射空穴捕获寿命为 12 ns,高注入导致量子环内空穴占有率饱和。还利用光学空穴发射电流的衰减特性来确定量子环的辐射和非辐射空穴逃逸机制的光谱和温度依赖性。
更新日期:2019-01-01
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