Abstract Four new symmetric diamines (4,4′-(2,7-diphenyl-9H-fluorene-9,9-diyl)dianiline (TPF-Ph), 4,4′-(2,7-bis(4-(naphthalen-1-yl)phenyl)-9H-fluorene-9,9-diyl)dianiline (TPF-Ph-Na), 4,4′-(2,7-di([1,1′-binaphthalen]-4-yl)-9H-fluorene-9,9-diyl)dianiline (TPF-2Na), and 4,4′-(2,7-bis(3,5-dimethoxyphenyl)-9H-fluorene-9,9-diyl)dianiline (TPF-Ph-OMe)) containing tetraphenyl fluorene (TPF) core were synthesized through Suzuki coupling reaction, the corresponding four polyimides (PI(TPF-Ph), PI(TPF-Ph-Na), PI(TPF-2Na), and PI(TPF-Ph-OMe)) were prepared through polymerization reaction. The electrical memory measurement displayed that PI(TPF-Ph) and PI(TPF-Ph-Na) exhibited volatile dynamic random access memory (DRAM) behaviors, PI(TPF-2Na) possessed volatile static random access memory (SRAM) behavior due to the more distorted structure of 1,1′-binaphthalenyl moiety, and PI(TPF-Ph-OMe) showed non-volatile write-once read-many (WORM) behavior due to the presence of deeper charge traps and higher dipole moment of 3,5-dimethoxyphenyl substituent. They possessed low turn-on switching voltages and the ON/OFF current ratios were between 103 and 105 with the retention times up 4 × 103 s. Quantum simulations about energy levels, electrostatic potential (ESP) surfaces, and dipole moment were used to demonstrate the switching mechanism. The experimental results indicated that the electrical memory behaviors of the synthesized polyimides could be tuned through rational structural modification of the electron donor moiety.

中文翻译：

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2,7-芳基取代基四苯基芴二胺衍生聚酰亚胺的合成及电阻转换特性

摘要 四种新型对称二胺 (4,4'-(2,7-diphenyl-9H-芴-9,9-diyl)dianiline (TPF-Ph), 4,4'-(2,7-bis(4-( naphthalen-1-yl)phenyl)-9H-芴-9,9-diyl)dianiline (TPF-Ph-Na), 4,4'-(2,7-di([1,1'-binaphthalen]-4) -yl)-9H-芴-9,9-二基)二苯胺 (TPF-2Na) 和 4,4'-(2,7-双(3,5-二甲氧基苯基)-9H-芴-9,9-二基)二苯胺 (TPF-Ph-OMe)) 含有四苯基芴 (TPF) 核，通过 Suzuki 偶联反应合成，相应的四种聚酰亚胺 (PI(TPF-Ph)、PI(TPF-Ph-Na)、PI(TPF-2Na) )和PI(TPF-Ph-OMe))通过聚合反应制备。电存储器测量表明，PI(TPF-Ph) 和 PI(TPF-Ph-Na) 表现出易失性动态随机存取存储器 (DRAM) 行为，PI(TPF-2Na) 具有易失性静态随机存取存储器 (SRAM) 行为，这是由于1 的结构越扭曲，由于存在更深的电荷陷阱和 3,5-二甲氧基苯基取代基的更高偶极矩，1'-联萘基部分和 PI(TPF-Ph-OMe) 表现出非挥发性的一次写入多次读取 (WORM) 行为。它们具有低开启开关电压，ON/OFF 电流比在 103 和 105 之间，保留时间高达 4 × 103 s。使用关于能级、静电势 (ESP) 表面和偶极矩的量子模拟来演示切换机制。实验结果表明，合成的聚酰亚胺的电记忆行为可以通过对电子供体部分的合理结构改性来调节。5-二甲氧基苯基取代基。它们具有低开启开关电压，ON/OFF 电流比在 103 和 105 之间，保留时间高达 4 × 103 s。使用关于能级、静电势 (ESP) 表面和偶极矩的量子模拟来演示切换机制。实验结果表明，合成的聚酰亚胺的电记忆行为可以通过对电子供体部分的合理结构改性来调节。5-二甲氧基苯基取代基。它们具有低开启开关电压，ON/OFF 电流比在 103 和 105 之间，保留时间高达 4 × 103 s。使用关于能级、静电势 (ESP) 表面和偶极矩的量子模拟来演示切换机制。实验结果表明，合成的聚酰亚胺的电记忆行为可以通过对电子供体部分的合理结构改性来调节。