Abstract III-V compounds with the zinc blende structure possess high carrier mobility and good power factors due to their unique crystal and electronic structure. In this work, In-doped GaSb (Ga1-xInxSb, x = 0, 0.02, 0.05, 0.1, 0.15, 0.2) were fabricated by combining melting method with SPS sintering technique. The microstructure and thermoelectric properties of Ga1-xInxSb compounds were systematically studied. Experimental results indicate that by introducing In into Ga sites, the lattice thermal conductivity has been effectively reduced by substituting Ga with In, resulting in a ZT value increases from 0.01 to 0.17 (600 K) when x = 0.02. However, further increase of In-doping dosage leads to the decrease of power factors, and therefore the decrease of ZT values.

中文翻译：

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Ga1-xInxSb 化合物的固体反应制备及其热电性能

摘要 闪锌矿结构的III-V族化合物由于其独特的晶体和电子结构，具有较高的载流子迁移率和良好的功率因数。在这项工作中，通过结合熔化法和 SPS 烧结技术制造了 In 掺杂的 GaSb (Ga1-xInxSb, x = 0, 0.02, 0.05, 0.1, 0.15, 0.2)。系统研究了Ga1-xInxSb化合物的微观结构和热电性能。实验结果表明，通过将 In 引入 Ga 位点，用 In 取代 Ga 有效降低了晶格热导率，导致当 x = 0.02 时 ZT 值从 0.01 增加到 0.17（600 K）。然而，进一步增加 In-doping 剂量会导致功率因数下降，从而导致 ZT 值下降。