Abstract Fe-doping is an effective way to improve physical performances of piezoelectric and ferroelectric materials. Under such circumstances, x mol% (x = 0.0, 1.0, 1.5, 2.5) Fe-doped 0.72Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3–0.10SrTiO3 (BNT–BKT–ST–xFe) thin films were prepared by sol-gel method and the relationships between the content of Fe and electromechanical properties of the films were studied. The BNT–BKT–ST–1.0Fe thin films exhibit the best electromechanical properties, whose Smax/Emax, Wrec, η, Pmax, Prem and er of are 68.00 pm/V, 20.34 J/cm3, 65.17%, 71.5 μC/cm2, 14.8 μC/cm2, 868 respectively. These results indicate that BNT–BKT–ST–1.0Fe thin films are promising for applications for advanced piezoelectric materials and capacitors with high energy-storage density.

中文翻译：

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Fe掺杂BNT-BKT-ST薄膜的增强压电和储能性能

摘要 Fe掺杂是提高压电和铁电材料物理性能的有效途径。在这种情况下，制备了 x mol% (x = 0.0, 1.0, 1.5, 2.5) Fe 掺杂的 0.72Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3–0.10SrTiO3 (BNT–BKT–ST–xFe) 薄膜采用溶胶-凝胶法研究了Fe含量与薄膜机电性能的关系。BNT-BKT-ST-1.0Fe薄膜表现出最好的机电性能，其Smax/Emax、Wrec、η、Pmax、Prem和er分别为68.00 pm/V、20.34 J/cm3、65.17%、71.5 μC/cm2 , 14.8 μC/cm2, 分别为 868。这些结果表明 BNT-BKT-ST-1.0Fe 薄膜有望用于具有高能量存储密度的先进压电材料和电容器。