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Facile silane functionalization of graphene oxide
Nanoscale ( IF 6.7 ) Pub Date : 2018-08-15 00:00:00 , DOI: 10.1039/c8nr04781b
Syeda S. Abbas 1, 2, 3, 4, 5 , Gregory J. Rees 3, 4, 5, 6 , Nicole L. Kelly 3, 4, 5, 6 , Claire E. J. Dancer 1, 2, 3, 4, 5 , John V. Hanna 3, 4, 5, 6 , Tony McNally 1, 2, 3, 4, 5
Affiliation  

The facile silane functionalization of graphene oxide (GO) was achieved yielding vinyltrimethoxysilane-reduced graphene oxide (VTMOS-rGO) nanospheres located in the inter-layer spacing between rGO sheets via an acid–base reaction using aqueous media. The successful grafting of the silane agent with pendant vinyl groups to rGO was confirmed by a combination of Fourier-transform infrared (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The structure and speciation of the silane-graphene network (nanosphere) and, the presence of free vinyl groups was verified from solid-state magic angle spinning (MAS) and solution 13C and 29Si nuclear magnetic resonance (NMR) measurements. Evidence from Scanning Electron Microscopy (SEM), High-Resolution Transmission Electron Microscopy (HRTEM) and TEM-High-Angle Annular Dark-Field (TEM-HAADF) imaging showed that these silane networks aided the exfoliation of the rGO layers preventing agglomeration, the interlayer spacing increased by 10 Å. The thermal stability (TGA/DTA) of VTMOS-rGO was significantly improved relative to GO, displaying just one degradation process for the silane network some 300 °C higher than either VTMOS or GO alone. The reduction of GO to VTMOS-rGO induced sp2 hybridization and enhanced the electrical conductivity of GO by 105 S m−1.

中文翻译:

氧化石墨烯的简便硅烷官能化

通过使用水介质的酸碱反应,实现了氧化石墨烯(GO)的简便硅烷功能化,从而得到了乙烯基三甲氧基硅烷还原的氧化石墨烯(VTMOS-rGO)纳米球,位于rGO板之间的层间间距中。傅立叶变换红外(FTIR),拉曼光谱,X射线光电子能谱(XPS)和X射线衍射(XRD)的结合证实了具有侧基乙烯基的硅烷试剂成功接枝到rGO上。硅烷-石墨烯网络(纳米球)的结构和形态以及游离乙烯基的存在已通过固态幻角纺丝(MAS)以及溶液13 C和29进行了验证Si核磁共振(NMR)测量。扫描电子显微镜(SEM),高分辨率透射电子显微镜(HRTEM)和TEM高角度环形暗场(TEM-HAADF)成像的证据表明,这些硅烷网络有助于rGO层的剥落,防止了结块,夹层间距增加了10Å。相对于GO,VTMOS-rGO的热稳定性(TGA / DTA)有了显着提高,这表明硅烷网络的降解过程仅比VTMOS或GO高300°C。GO还原为VTMOS-rGO可引起sp 2杂交,并使GO的电导率提高10 5 S m -1
更新日期:2018-08-15
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