Different kinds of sulfur sources which acted as a growth enhancer of carbon nanotube (CNT) were employed in chemical vapor deposition (CVD) process. Influences of sulfur sources, sulfur powder and thiourea, were investigated. The production of CNTs was facilitated when sulfur source was added, but its degree depended on sulfur source. Results showed that the smallest activation energy for CNT growth was obtained in sulfur powder, and an intermediate value between Co/Mo without sulfur source and with sulfur powder was obtained in thiourea. We attempted to interpret the difference in activation energy, especially between thiourea and sulfur powder.

中文翻译：

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不同硫源作为促进剂对化学气相沉积中碳纳米管生长的影响

在化学气相沉积（CVD）工艺中使用了不同种类的硫源，其充当碳纳米管（CNT）的生长促进剂。研究了硫源，硫粉和硫脲的影响。添加硫源可促进碳纳米管的生产，但其程度取决于硫源。结果表明，在硫粉中获得了最小的CNT生长活化能，在硫脲中获得了无硫的Co / Mo和有硫粉的Co / Mo的中间值。我们试图解释活化能的差异，特别是硫脲和硫粉之间的活化能的差异。