Diffusion bonding of SiC ceramic with in-situ formed SiC-TiB₂ composite interlayer by reactive spark plasma sintering with B₄C-Ti₃SiC₂-Si powder mixture was investigated. It was found that a dense composite interlayer between the SiC ceramic substrate could be obtained at 1600 °C for 10 min. Granular-shaped SiC with submicron-size and elongated TiB₂ with micro-size were uniformly distributed in the bonding layer. The joint strength and hardness of the composite interlayer increased as the joining temperature increased up to 1600 °C due to the improved relative density and the higher fraction of elongated TiB₂ phase. The grain growth and formation of micro-cracks deteriorated the mechanical strength of the 1700 °C joint. The maximum shear strength of 128.0 ± 7.3 MPa was achieved for the joint bonded at 1600 °C. The toughening mechanisms of crack deflection, crack bridging and crack branching, and hardening mechanism of dual phase strengthening were observed in the morphology of indentation cracks.

研究了利用B ₄ C-Ti ₃ SiC ₂ -Si粉末混合物的反应性放电等离子体烧结法对SiC陶瓷与原位形成的SiC-TiB ₂复合中间层的扩散结合。发现在1600℃下保持10分钟可以在SiC陶瓷基体之间获得致密的复合中间层。亚微米尺寸的颗粒状SiC和微米尺寸的细长TiB ₂均匀分布在粘结层中。随着结合温度的提高，直至达到1600°C，复合中间层的结合强度和硬度都得到了提高，这是由于相对密度的提高和细长TiB _2的比例提高了。阶段。晶粒的生长和微裂纹的形成降低了1700°C接头的机械强度。对于在1600°C粘结的接头，最大抗剪强度为128.0±7.3 MPa。在压痕裂纹的形态中观察到了裂纹变形，裂纹桥接和裂纹分支的增韧机理，以及双相强化的硬化机理。