To facilitate potential applications of tungsten diselenide (WSe₂) in electronics, controllable doping is of great importance. As an industrially compatible technology, plasma treatment has been used to dope two-dimensional (2D) materials. However, owing to the strong etching effect in transition metal dichalcogenides (TMDCs), it is difficult to controllably dope 2D WSe₂ crystals by plasma. Herein, we develop a moderate ammonia plasma treatment method to prepare nitrogen-doped WSe₂ with controlled nitrogen content. Interestingly, Raman, photoluminescence, X-ray photoelectron spectroscopy, and electrical measurements reveal abnormal n-doping behavior of nitrogen-doped WSe₂, which is attributed to selenium anion vacancy introduced by hydrogen species in ammonia plasma. Nitrogen-doped WSe₂ with abnormal n-doping behavior has potential applications in future TMDCs-based electronics.

中文翻译：

---

中度氨等离子体处理制得的氮掺杂二硒化钨中n型掺杂异常

为了促进二硒化钨（WSe ₂）在电子领域的潜在应用，可控掺杂非常重要。作为一种工业兼容技术，等离子体处理已被用于掺杂二维（2D）材料。然而，由于在过渡金属二硫化二氢（TMDC）中的强蚀刻作用，难以通过等离子体可控地掺杂2D WSe ₂晶体。在本文中，我们开发了一种适度的氨等离子体处理方法，以制备具有受控氮含量的氮掺杂WSe ₂。有趣的是，拉曼光谱，光致发光，X射线光电子能谱和电学测量揭示了氮掺杂WSe _2的异常n掺杂行为。，这归因于氨等离子体中氢物种引入的硒阴离子空位。具有异常n掺杂行为的氮掺杂WSe ₂在未来基于TMDC的电子产品中具有潜在的应用。