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Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch
Optics Letters ( IF 3.6 ) Pub Date : 2018-08-08 , DOI: 10.1364/ol.43.003929
Ju-Hung Chao , Wenbin Zhu , Chang-Jiang Chen , Yun-Goo Lee , Annan Shang , Shizhuo Yin , Robert C. Hoffman

We report a new type of photoconductive semiconductor switch (PCSS), consisting of a semi-insulating gallium arsenic (GaAs) substrate and a front-bonded ruby crystal. The 532 nm laser pulses from an Nd-YAG laser incident on the front surface of the ruby crystal. A portion of the laser pulse passes through the crystal and reaches the GaAs substrate, and the remaining portion of the laser pulse is absorbed by the ruby crystal. This results in the emission of 694 nm fluorescent light. Furthermore, a portion of emitted fluorescent light also reaches the GaAs substrate. The high-fluence 532 nm short laser pulse with a pulse width around several nanoseconds is used to trigger the PCSS entering the high-gain nonlinear mode, whereas the low-fluence long-lifetime (on the order of a millisecond) 694 nm fluorescent light is used to maintain the lock-on time. Thus, an ultralong lock-on time on the order of millisecond is achieved, which is 3 orders of magnitude longer than a typical lock-on time of high-gain GaAs PCSS.

中文翻译:

启用红宝石荧光的超长锁定时间高增益镓砷光电导半导体开关

我们报告了一种新型的光电导半导体开关(PCSS),该半导体开关由半绝缘的砷化镓(GaAs)衬底和前结合的红宝石晶体组成。来自Nd-YAG激光的532 nm激光脉冲入射到红宝石晶体的前表面。一部分激光脉冲穿过晶体并到达GaAs衬底,其余部分被红宝石晶体吸收。这导致了694nm荧光的发射。此外,发射的荧光的一部分也到达GaAs衬底。高通量的532 nm短激光脉冲(脉冲宽度大约为几纳秒)用于触发PCSS进入高增益非线性模式,而低通量的长寿命(约毫秒)的694 nm荧光灯用于维持锁定时间。
更新日期:2018-08-15
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