This work reports a breakthrough technique for achieving high quality and uniform molybdenum dichalcogenide (MoX₂ where X = S, Se) films on large-area wafers via metal-agglomeration-suppressed growth (MASG) with small chalcogen (X-) molecules at growth temperatures (T_G) of 600 °C or lower. In order to grow MoS₂ films suitable for field effect transistors (FETs), S-molecules should be pre-deposited on Mo films at 60 °C prior to heating the substrate up to T_G. The pre-deposited S-molecules successfully suppressed the agglomeration of Mo during sulfurization and prevented the formation of protruding islands in the resultant sulfide films. The small X-molecules supplied from a thermal cracker reacted with Mo-precursor film to form MoX₂. The film quality strongly depends on the temperatures of cracking and reservoir zones, as well as T_G. The MoS₂ film grown at 570 °C showed a thickness variation of less than 3.3% on a 6 inch-wafer. The mobility and on/off current ratio of 6.1 nm-MoS₂ FET at T_G = 570 °C were 59.8 cm² V⁻¹ s⁻¹ and 10⁵, respectively. The most significant advantages of the MASG method proposed in this work are its expandability to various metal dichalcogenides on larger substrates as well as a lower T_G enabled by using reactive small molecules supplied from a cracker, for which temperature is independently controlled.

中文翻译：

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金属团聚抑制了具有小的硫和硒分子的MoS ₂和MoSe ₂薄膜的生长，用于高迁移率场效应晶体管应用†

这项工作报告了一项突破性技术，该技术可通过金属团聚抑制生长（MASG）和小的硫族元素（X-）分子来在大面积晶片上获得高质量且均匀的二硫化钼钼（MoX ₂，其中X = S，Se）膜温度（T _G）为600°C或更低。为了生长适用于场效应晶体管（FET）的MoS ₂膜，应先在60°C的Mo膜上预沉积S分子，然后再将衬底加热到T _G。预沉积的S分子成功地抑制了硫化过程中Mo的团聚，并防止了所得硫化物膜中形成突出的岛。由热裂解器提供的小的X分子与Mo前驱体膜反应形成MoX ₂。膜的质量强烈依赖于裂化和储区，以及的温度Ť _ģ。在570°C下生长的MoS ₂膜在6英寸晶圆上的厚度变化小于3.3％。在T _G = 570°C时6.1 nm-MoS ₂ FET的迁移率和开/关电流比为59.8 cm ² V ^-1 s ^-1和10 ⁵， 分别。这项工作中提出的MASG方法的最显着优点是其可扩展性，可扩展至较大基材上的各种金属二卤化物，以及通过使用由裂解器提供的反应性小分子，可独立控制温度的反应性小分子，可实现较低的T _G。