The emergence of two-dimensional Dirac materials, particularly transition metal dichalcogenides (TMDs), has reinvigorated interest in valleytronics, which utilizes the electronic valley degree of freedom for information storage and processing. Here, we review the basic valley-dependent properties and their experimental demonstrations in single-layer semiconductor TMDs with an emphasis on the effects of band topology and light–valley interactions. We also provide a brief summary of the recent advances on controlling the valley degree of freedom in TMDs with light and other means for potential applications.

中文翻译：

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二维半导体中的光谷相互作用

二维Dirac材料的出现，尤其是过渡金属二卤化金属（TMDs）引起了人们对Valleytronics的兴趣，该公司利用电子山谷的自由度进行信息存储和处理。在这里，我们回顾了基本的与谷有关的特性及其在单层半导体TMD中的实验论证，重点是对能带拓扑和光-谷相互作用的影响。我们还简要概述了使用光和其他潜在应用手段来控制TMD中谷底自由度的最新进展。