Recent experiment has shown that the ABC-stacked trilayer graphene-boron nitride Moire super-lattice at half-filling is a Mott insulator. Based on symmetry analysis and effective band structure calculation, we propose a valley-contrasting chiral tight-binding model with local Coulomb interaction to describe this Moire super-lattice system. By matching the positions of van Hove points in the low-energy effective bands, the valley-contrasting staggered flux per triangle is determined around $\mathrm{\pi }/2$. When the valence band is half-filled, the Fermi surfaces are found to be perfectly nested between the two valleys. Such an effect can induce an inter-valley spiral order with a gap in the charge excitations, indicating that the Mott insulating behavior observed in the trilayer graphene-boron nitride Moire super-lattice results predominantly from the inter-valley scattering.

最近的实验表明，ABC 堆叠的三层石墨烯-氮化硼莫尔超晶格在半填充时是莫特绝缘体。基于对称性分析和有效能带结构计算，我们提出了一种具有局部库仑相互作用的谷对比手性紧束缚模型来描述这种莫尔超晶格系统。通过匹配低能有效带中范霍夫点的位置，确定每个三角形的谷对比交错通量围绕$\mathrm{\pi }/\mathrm{2个}$. 当价带半满时，发现费米面完美地嵌套在两个谷之间。这种效应可以诱导谷间螺旋有序，在电荷激发中存在间隙，表明在三层石墨烯-氮化硼莫尔超晶格中观察到的莫特绝缘行为主要是由谷间散射引起的。