An efficient photoanode based on CdS nanorod@SnO₂ nanobowl (CdS NR@SnO₂ NB) arrays is designed and fabricated by the preparation of SnO₂ nanobowl arrays via nanosphere lithography followed by hydrothermal growth of CdS nanorods on the inner surface of the SnO₂ nanobowls. A photoelectrochemical (PEC) device constructed by using this hierarchical CdS NR@SnO₂ NB photoanode presents significantly enhanced performance with a photocurrent density of 3.8 mA cm⁻² at 1.23 V versus a reversible hydrogen electrode (RHE) under AM1.5G solar light irradiation, which is about 2.5 times higher than that of CdS nanorod arrays. After coating with a thin layer of SiO₂, the photostability of the CdS NR@SnO₂ NB arrays is greatly enhanced, resulting in a stable photoanode with a photocurrent density of 3.0 mA cm⁻² retained at 1.23 V versus the RHE. The much improved performance of the CdS NR@SnO₂ NB arrays toward PEC hydrogen generation can be ascribed to enlarged surface area arising from the hierarchical nanostructures, improved light harvesting owing to the NR@NB architecture containing multiple scattering centers, and enhanced charge separation/collection efficiency due to the favorable CdS–SnO₂ heterojunction.

中文翻译：

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高效，稳定的光电化学产氢的CdS Nanorod @ SnO2纳米碗阵列

设计并制造了一种基于CdS纳米棒@SnO ₂纳米碗（CdS NR @ SnO ₂ NB）阵列的高效光电阳极，该工艺是通过纳米球体光刻技术制备SnO ₂纳米碗阵列，然后在SnO ₂的内表面上水热生长CdS纳米棒而设计和制造的。纳米碗。与AM1.5G太阳光照射下的可逆氢电极（RHE）相比，使用此分层CdS NR @ SnO ₂ NB光电阳极构造的光电化学（PEC）器件在1.23 V下的光电流密度为3.8 mA cm ^-2时，性能显着增强。，这是CdS纳米棒阵列的约2.5倍。涂上一层SiO ₂薄层后，大大提高了CdS NR @ SnO ₂ NB阵列的光稳定性，从而获得了稳定的光阳极，相对于RHE，光电流密度为3.0 mA cm ^-2保持在1.23V。CdS NR @ SnO ₂ NB阵列在产生PEC氢方面的性能大大提高，可归因于分层纳米结构产生的表面积增大，由于NR @ NB架构包含多个散射中心而提高了光收集效率以及增强了电荷分离/ CdS–SnO _2的异质结有利于收集效率。