We report on the formation of transferable microspheres monolayers consisting of ZnSnO₃ (ZTO) synthesized via fast ethanol precipitation and their application to GaN-based light-emitting diodes (LEDs) to improve device performance. ZTO microspheres with diameters of 820 ± 20 nm (ZTO-1), 910 ± 10 nm (ZTO-2), and 1200 ± 10 nm (ZTO-3) were synthesized and arrayed to form a monolayer using polydimethylsiloxane (PDMS) and a unidirectional rubbing method. ZTO-1, ZTO-2, and ZTO-3 monolayers exhibited optical transmittance percentages of 94.4%, 92.98%, and 87.09% at 450 nm, respectively. Effects of ZTO monolayers on the light extraction efficiency of LEDs were evaluated using LED chips sized 800 μm × 800 μm. LEDs with a ZTO-3 monolayer as a top layer had a light extraction efficiency of ∼144%, relative to regular LEDs, as well as improved electrical properties, as evidenced by a decrease in V_turn on of ∼0.6 V and a decrease in R_on by 0.036 kΩ. XPS analysis indicated that the improvement in the electrical properties of LEDs with ZTO monolayers is due to the presence of graphene-like carbon bonds present in carbon residue that remains on the surface of the LED after removal of polymer. In terms of light extraction, ZTO monolayers effectively guided light generation from active regions in LEDs toward air, which was confirmed by three-dimensional finite-difference time-domain simulations.

中文翻译：

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使用可转移的ZnSnO ₃（ZTO）微球单层膜改善GaN基发光二极管（LED）的光电性能

我们报告了由ZnSnO ₃组成的可转移微球单层的形成通过快速乙醇沉淀法合成的ZTO（ZTO）及其在GaN基发光二极管（LED）中的应用，以改善器件性能。合成直径为820±20 nm（ZTO-1），910±10 nm（ZTO-2）和1200±10 nm（ZTO-3）的ZTO微球，并使用聚二甲基硅氧烷（PDMS）和单向摩擦法。ZTO-1，ZTO-2和ZTO-3单层在450 nm处的透光率分别为94.4％，92.98％和87.09％。使用尺寸为800μm×800μm的LED芯片评估了ZTO单层对LED的光提取效率的影响。用ZTO-3单层作为顶层的LED具有~144％的光提取效率，相对于常规的LED，以及改善的电性能，通过在减少所证明V_接通约为0.6 V，R _on降低了0.036kΩ。XPS分析表明，具有ZTO单层的LED的电学性能的提高是由于在去除聚合物后残留在LED表面的碳残留物中存在类石墨烯状碳键的缘故。在光提取方面，ZTO单层有效地将光从LED的有效区域引导向空气，这已通过三维有限差分时域仿真得到了证实。