In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decrease with increasing power density or decreased oxygen partial pressure, while the endurance remained stable and the resistance window R^OFF/R^ON was found to increase. In-depth XPS analysis connects these observations to a controllable oxygen sub-stoichiometry in the sputter-deposited films. Our analysis shows that the decrease of the forming voltage results from an increase in carrier density in the as-prepared thin-films, which is induced by the presence of oxygen vacancies.

中文翻译：

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通过氧化钽ReRAM器件中经过定制的非化学计量比的氧气来降低形成电压。

在这项研究中，我们调查了氧非化学计量对基于氧化钽的忆阻器件的电阻开关性能的影响。以变​​化的溅射功率和氧分压沉积氧化钽薄膜。发现电铸电压随着功率密度的增加或氧气分压的降低而降低，而耐久性保持稳定，并且电阻窗口R ^OFF / R ^ON升高。深入的XPS分析将这些观察结果与溅射沉积膜中可控的氧亚化学计量关系联系起来。我们的分析表明，形成电压的降低是由于所制备的薄膜中载流子密度的增加所致，这是由氧空位的存在引起的。