We describe a spin wave modulator - spintronic device aimed to control spin wave propagation by an electric field. The modulator consists of a ferromagnetic film serving as a spin wave bus combined with a synthetic multiferroic comprising piezoelectric and magnetostrictive materials. Its operation is based on the stress-mediated coupling between the piezoelectric and magnetostrictive materials. By applying an electric field to the piezoelectric layer, the stress is produced. In turn, the stress changes the direction of the easy axis in the magnetostrictive layer and affects spin wave transport. We present experimental data on a prototype consisting of a piezoelectric [Pb(Mg_1/3Nb_2/3)O₃]_(1-x) -[PbTiO₃]_x substrate, and 30 nm layer of magnetostrictive Ni film, where the film is attached to a 30 nm thick Ni₈₁Fe₁₉ spin wave bus. We report spin wave signal modulation in Ni₈₁Fe₁₉ layer by an electric field applied across the piezoelectric layer. The switching between the spin wave conducting and non-conducting states is achieved by applying ±0.3 MV/m electric field. We report over 300% modulation depth detected 80 μm away from the excitation port at room temperature. The demonstration of the spin wave modulator provides a new direction for spin-based device development by utilizing an electric field for spin current control.

中文翻译：

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基于合成多铁性结构的磁电自旋波调制器。

我们描述了自旋波调制器-旨在通过电场控制自旋波传播的自旋电子设备。调制器由充当自旋波总线的铁磁膜与包含压电和磁致伸缩材料的合成多铁磁组成。其操作基于压电和磁致伸缩材料之间的应力介导耦合。通过向压电层施加电场，产生了应力。反过来，应力会改变磁致伸缩层中易轴的方向，并影响自旋波的传输。我们在由压电[Pb（Mg _1/3 Nb _2/3）O ₃ ] _（1-x） -[PbTiO ₃ ]组成的原型上提供实验数据_x基板和30 nm的磁致伸缩Ni膜层，其中该膜连接到30 nm厚的Ni ₈₁ Fe ₁₉自旋波总线上。我们报道了通过施加在压电层上的电场在Ni ₈₁ Fe ₁₉层中产生的自旋波信号调制。通过施加±0.3 MV / m的电场可实现自旋波导通状态与非导通状态之间的切换。我们报告在室温下，距激励端口80μm处检测到超过300％的调制深度。自旋波调制器的演示通过利用电场控制自旋电流为基于自旋的器件开发提供了新的方向。