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Surface Enhanced Raman Effect on CVD Growth of WS2 Film
Chemical Physics Letters ( IF 2.8 ) Pub Date : 2018-07-18 , DOI: 10.1016/j.cplett.2018.07.040
Lan Meng , Song Hu , Chaoji Xu , Xiangfu Wang , Heng Li , Xiaohong Yan

Chemical vapor deposition (CVD) method was used to grow large area and layer controllable WS2 film. Our results show that the as grown WS2 film is an excellent substrate for surface enhanced Raman scattering (SERS). The Raman enhancement effect depends crucially on the layer number of WS2 film: monolayer WS2 offers the strongest Raman signal, and the Raman enhancement effect gradually decreases with the increase in the layer number of WS2. Further analysis indicates that this transition originates from the charge transfer yield between the R6G molecules and the underlying WS2 substrate.



中文翻译:

表面增强拉曼效应对WS 2膜的CVD生长的影响

化学气相沉积(CVD)方法用于生长大面积和可控层的WS 2膜。我们的结果表明,生长的WS 2膜是用于表面增强拉曼散射(SERS)的出色基材。拉曼增强效应关键取决于WS 2膜的层数:单层WS 2提供最强的拉曼信号,并且拉曼增强效应随着WS 2层数的增加而逐渐降低。进一步的分析表明,这种转变源自R6G分子与下面的WS 2底物之间的电荷转移产率。

更新日期:2018-07-19
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