Six new whole aromatic poly(azomethine)s with different rigidity were prepared from three diamines and two dialdehydes, all of them containing a diphenylsilane moiety as a central structural element. Two amines containing biphenyl moieties were obtained for the first time. Thus, the synthesized polymers contain two silicon atoms in the repeat unit, where methyl and/or phenyl groups bonded to them, complete the tetra-valence of the heteroatom. The new materials were structurally characterized by means of FT-IR, solid NMR and elemental analysis. Solubility was tested in several organic solvents at room temperature and 40 °C and the inherent viscosity was determined. GPC analysis showed oligomeric chains of five repetitive units for the tested samples. Additionally, thermal behavior was studied by TGA and DSC analysis, by evidencing materials highly stable and rigid. Band gaps values ranging between 2.71 and 3.14 eV were obtained from UV/Vis and DRS analysis. The spin-coating technique was used to prepare films from soluble samples in NMP and their thicknesses were determined by the ellipsometric method. From these samples, and using AFM and four-point techniques, the effect of the annealing time on the roughness and conductivity of the films was studied. In accordance with the appropriate thermal and conductivity properties of the new silylated materials (which has a whole aromatic structure), could be proposed as an alternative for applications in the optoelectronics field.

由三个二胺和两个二醛制备了六个具有不同刚性的新的全芳族聚（偶氮甲碱），它们全部包含二苯基硅烷部分作为中心结构元素。首次获得了两种含联苯部分的胺。因此，合成的聚合物在重复单元中包含两个硅原子，其中结合的甲基和/或苯基基团完成了杂原子的四价。通过FT-IR，固体NMR和元素分析对新材料进行结构表征。在室温和40°C下在几种有机溶剂中测试了溶解度，并确定了比浓对数粘度。GPC分析显示测试样品的五个重复单元的寡聚链。此外，还通过TGA和DSC分析研究了热行为，通过证明材料具有高度的稳定性和刚性。从UV / Vis和DRS分析获得的带隙值介于2.71和3.14 eV之间。使用旋涂技术从NMP中的可溶性样品制备膜，并通过椭偏法确定其厚度。从这些样品中，并使用AFM和四点技术，研究了退火时间对薄膜粗糙度和电导率的影响。根据新的硅烷化材料（具有完整的芳族结构）的适当的导热性和导电性，可以提出作为光电子领域应用的替代方案。使用旋涂技术从NMP中的可溶性样品制备膜，并通过椭偏法确定其厚度。从这些样品中，并使用AFM和四点技术，研究了退火时间对薄膜粗糙度和电导率的影响。根据新的硅烷化材料（具有完整的芳族结构）的适当的导热性和导电性，可以提出作为光电子领域应用的替代方案。使用旋涂技术从NMP中的可溶性样品制备膜，并通过椭偏法确定其厚度。从这些样品中，并使用AFM和四点技术，研究了退火时间对薄膜粗糙度和电导率的影响。根据新的硅烷化材料（具有完整的芳族结构）的适当的导热性和导电性，可以提出作为光电子领域应用的替代方案。