Abstract Chemical vapor deposition (CVD) is one of the best ways to scalably grow low cost, high quality graphene on metal substrates; unfortunately, it not ideal for producing graphene on dielectric substrates. Here, we demontrate production of a high quality graphene layer on Sapphire using CVD with a copper catalyst. The catalyst consists of a thin copper film grown epitaxially on α- Al 2 O 3 (0001). After CVD growth of Graphene, the copper can be removed by simple evaporation in the presence of a carbon source ( C 2 H 4 ). We characterized the resulting graphene layer using Raman spectroscopy, atomic force microscopy (AFM), optical transmission and helium atom scattering (HAS). The sample exhibited a reduced Raman D peak and an excellent 2D to G ratio. AFM and HAS show large graphene domains over a macroscopic region. We measured > 86 % transparency over the visible spectrum.

中文翻译：

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一种在铜催化剂上使用化学气相沉积在蓝宝石上生产高透明石墨烯的简单方法

摘要 化学气相沉积 (CVD) 是在金属基板上大规模生长低成本、高质量石墨烯的最佳方法之一。不幸的是，它不适合在介电基板上生产石墨烯。在这里，我们演示了使用 CVD 和铜催化剂在蓝宝石上生产高质量石墨烯层。该催化剂由在 α-Al 2 O 3 (0001) 上外延生长的薄铜膜组成。在石墨烯的 CVD 生长之后，可以在碳源 (C 2 H 4 ) 存在下通过简单的蒸发去除铜。我们使用拉曼光谱、原子力显微镜 (AFM)、光学透射和氦原子散射 (HAS) 对所得石墨烯层进行了表征。该样品表现出降低的拉曼 D 峰和出色的 2D 与 G 比。AFM 和 HAS 显示宏观区域上的大石墨烯域。我们测量 >