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Fabrication of two-dimensional Ni2P/ZnIn2S4 heterostructures for enhanced photocatalytic hydrogen evolution
Chemical Engineering Journal ( IF 15.1 ) Pub Date : 2018-07-17 , DOI: 10.1016/j.cej.2018.07.107
Xu-li Li , Xiao-jing Wang , Jia-yu Zhu , Yu-pei Li , Jun Zhao , Fa-tang Li

Promoting electron-hole separation and migration and lowering the overpotential of hydrogen evolution reactions are two effective solutions for improving photocatalytic hydrogen performance. Suitable co-catalyst and appropriate interfacial contacts can effectively lower overpotential and can also construct an electric field at the interface to increase the separation efficiency of the carriers. In this work, we design and fabricate a 2D-2D type of Ni2P co-catalyst modified with ZnIn2S4 for boosting the performance of photocatalytic hydrogen evolution. As a co-catalyst, the 2D Ni2P nanosheets exhibit a lower overpotential and smaller charge transfer resistance in hydrogen evolution reactions, and is much improved in both respects compared to Ni2P nanoparticles. Based on this, 2D/2D Ni2P/ZnIn2S4 nanohybrids with large contact regions and shorter transmission distances of the charges were fabricated, which effectively improve the separation of photo induced carriers and the interfacial charge transfer. By taking advantage of the above features, the fabricated 2D-2D Ni2P/ZnIn2S4hybrid exhibits a superior hydrogen evolution rate of 2066 μmol·h−1·g−1 under visible light irradiation, and the apparent quantum yield was 7.7% at 420 ± 20 nm. This activity far exceeds performance of the 0D/2D Ni2P/ZnIn2S4 hybrid, and is ascribed to better charge separation and accelerated surface reactions of the Ni2P nanosheets.



中文翻译:

二维Ni 2 P / ZnIn 2 S 4异质结构的制备以增强光催化氢的释放

促进电子-空穴的分离和迁移以及降低氢释放反应的超电势是提高光催化氢性能的两个有效解决方案。合适的助催化剂和合适的界面接触可以有效地降低过电势,并且还可以在界面处形成电场以增加载体的分离效率。在这项工作中,我们设计并制造了以ZnIn 2 S 4改性的2D-2D型Ni 2 P助催化剂,以提高光催化氢释放的性能。作为助催化剂,2D Ni 2P纳米片在氢析出反应中显示出较低的过电势和较小的电荷转移阻力,并且与Ni 2 P纳米粒子相比在两个方面都有很大的改善。在此基础上,制备了接触面积大,电荷传输距离较短的2D / 2D Ni 2 P / ZnIn 2 S 4纳米杂化物,有效地改善了光生载流子的分离和界面电荷转移。利用上述特征,所制造的2D-2D Ni 2 P / ZnIn 2 S 4杂化物显示出优异的氢释放速率为2066μmol ·h -1 ·g -1在可见光照射下,表观量子产率在420±20 nm下为7.7%。该活性远远超过0D / 2D Ni 2 P / ZnIn 2 S 4杂化物的性能,并且归因于更好的电荷分离和Ni 2 P纳米片的加速表面反应。

更新日期:2018-07-17
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