Electroresistance has become a stimulating research topic because of its potential applications in next‐generation nonvolatile memory technology. Here, an electroresistance‐like behavior of the antiperovskite Mn₃GaC compound around the antiferromagnetic–intermediate phase transition is reported. A high sensing current significantly decreases the fraction of the antiferromagnetic phase of higher resistivity relative to the intermediate phase of lower resistivity upon warming, showing a resistivity change up to 50%. Through extensive studies of the resistivity at different sample locations and of the magnetization under applied current, it is unambiguously shown that this electroresistance‐like behavior originates from the local Joule heating of the sample due to high‐resistive lead contacts and not from an intrinsic effect. These findings open an available avenue to explore electroresistance‐like behavior by achieving phase coexistence of a high‐ and low‐resistivity phase under the driving force of local Joule heating.

中文翻译：

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抗钙钛矿型Mn3GaC的局部焦耳热模拟电阻行为

由于电阻在下一代非易失性存储技术中的潜在应用，电阻已成为一个令人兴奋的研究课题。在这里，抗钙钛矿Mn ₃的类似电阻的行为据报道，在反铁磁-中间相变附近存在GaC化合物。高感测电流相对于加热后电阻率较低的中间相而言，会明显降低电阻率较高的反铁磁相的比例，从而显示出电阻率变化高达50％。通过对不同样品位置的电阻率以及施加电流下的磁化强度的广泛研究，可以明确地表明，这种类似电阻的行为源自样品的局部焦耳热，这是由于高电阻引线接触引起的，而不是由内在效应引起的。 。这些发现为在局部焦耳热的驱动下实现高电阻率相和低电阻率相的共存开辟了一条探索类似电阻行为的可行途径。