1D III–V semiconductor nanowires (NWs) attract significant interests in fundamental physics and promising applications of high‐performance room‐temperature infrared (IR) detectors. Here, a comprehensive overview of recent advances in the study of III–V NW‐based IR detectors is presented, starting from the rationale of III–V NWs for IR detectors, the controllable synthesis of III–V NWs to the precise manipulation of III–V NW‐based IR detector performances. With a bandgap covering the whole IR wavelength range and a high carrier mobility, III–V NWs are considered as the most optimal channel materials for high‐performance IR detectors. The synthesis methods and growth mechanisms of high quality III–V NWs are discussed, emphasizing the low‐cost solid source chemical vapor deposition (CVD) technique, which is developed as the two‐step and surfactant‐assisted CVD methods in the growth of various III–V NWs. Next, the representative types of III–V NW IR detectors are discussed and typical strategies to resolve main challenges limiting the performance of III–V NW‐based IR detectors are reviewed, including high density of surface trap states, large dark current, etc. Finally, the possible challenges and opportunities in the future development of III–V NW‐based IR detectors are discussed.

中文翻译：

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III–V族纳米线红外探测器的最新进展

1D III–V半导体纳米线（NWs）在基础物理学和高性能室温红外（IR）检测器的有前途的应用中引起了极大的兴趣。在此，将对基于III–V NW的红外探测器的最新研究进展进行全面概述，从针对IR探测器的III–V NW的原理，可控合成III–V NW到精确操纵III的角度出发。基于–V NW的IR检测器性能。III–V NW具有覆盖整个IR波长范围的带隙和高载流子迁移率，被认为是高性能IR检测器的最佳通道材料。讨论了高质量III–V NW的合成方法和生长机理，着重介绍了低成本的固体源化学气相沉积（CVD）技术，在各种III–V NW的生长中，它是通过两步法和表面活性剂辅助CVD方法开发的。接下来，讨论了III–V NW型红外探测器的代表性类型，并针对解决限制基于III–V NW型红外探测器性能的主要挑战的典型策略进行了综述，包括高表面陷阱态密度，大暗电流等。最后，讨论了基于III–V NW的红外探测器在未来发展中可能遇到的挑战和机遇。