We investigate the thermal properties of thin InSe layers with high-κ oxide Al2O3 stress liners. Temperature-dependent Raman spectroscopy demonstrated that the Al2O3 passivation layer significantly reduced the thermal variation coefficients of the in-plane E2g1 phonon mode of the InSe layer from −0.03284 cm−1/K to −0.0212 cm−1/K in comparison with the InSe sample without the Al2O3 capping layer. Combined with power-dependent Raman spectroscopy, the in-plane thermal conductivity of InSe reaches about 53.1 W/mK, ∼40% greater than that without the Al2O3 capping layer, 38.2 W/mK, which is attributed to the large thermal conductivity of Al2O3 and the electron-phonon interactions at the interface. Generally, this work will contribute to improving the performances of the InSe-based nano-devices and extending their applications profoundly.

中文翻译：

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通过薄的 Al2O3 应力衬垫对 InSe 层进行热性能工程

我们研究了具有高 κ 氧化物 Al2O3 应力衬垫的 InSe 薄层的热性能。温度相关拉曼光谱表明，与 InSe 相比，Al2O3 钝化层显着降低了 InSe 层的面内 E2g1 声子模式的热变化系数从 -0.03284 cm-1/K 到 -0.0212 cm-1/K没有 Al2O3 覆盖层的样品。结合功率相关的拉曼光谱，InSe 的面内热导率达到约 53.1 W/mK，比没有 Al2O3 覆盖层的 38.2 W/mK 高约 40%，这归因于 Al2O3 的大热导率以及界面处的电子-声子相互作用。一般来说，这项工作将有助于提高基于 InSe 的纳米器件的性能并深入扩展它们的应用。