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Influence of effective channel length in self-aligned coplanar amorphous-indium-gallium-zinc-oxide thin-film transistors with different annealing temperatures
Applied Physics Letters ( IF 4 ) Pub Date : 2018-07-09 , DOI: 10.1063/1.5027373
Hyeong Wook Kim 1 , Eok Su Kim 2 , Joon Seok Park 2 , Jun Hyung Lim 2 , Bo Sung Kim 1
Affiliation  

Electrical characteristics of self-aligned coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) were investigated for different annealing temperatures. The field-effect mobility of the a-IGZO TFTs increased with the annealing temperature, in particular, for a small channel length. The effective channel length (Leff) of the a-IGZO TFTs was extracted using the transmission line method. The decrease in Leff significantly depended on the annealing temperature, due to the hydrogen diffusion into the a-IGZO channel region. The intrinsic mobility calculated from the channel resistance of the a-IGZO TFTs was in good agreement with the mobility corrected by Leff.Electrical characteristics of self-aligned coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) were investigated for different annealing temperatures. The field-effect mobility of the a-IGZO TFTs increased with the annealing temperature, in particular, for a small channel length. The effective channel length (Leff) of the a-IGZO TFTs was extracted using the transmission line method. The decrease in Leff significantly depended on the annealing temperature, due to the hydrogen diffusion into the a-IGZO channel region. The intrinsic mobility calculated from the channel resistance of the a-IGZO TFTs was in good agreement with the mobility corrected by Leff.

中文翻译:

不同退火温度下自对准共面非晶铟镓锌氧化物薄膜晶体管有效沟道长度的影响

研究了不同退火温度下自对准共面非晶铟镓锌氧化物 (a-IGZO) 薄膜晶体管 (TFT) 的电气特性。a-IGZO TFT 的场效应迁移率随着退火温度的增加而增加,特别是对于小沟道长度。使用传输线方法提取 a-IGZO TFT 的有效沟道长度 (Leff)。由于氢扩散到 a-IGZO 沟道区,Leff 的降低显着取决于退火温度。从 a-IGZO TFT 的沟道电阻计算的本征迁移率与 Leff 校正的迁移率非常一致。研究了不同退火温度下自对准共面非晶铟镓锌氧化物 (a-IGZO) 薄膜晶体管 (TFT) 的电气特性。a-IGZO TFT 的场效应迁移率随着退火温度的增加而增加,特别是对于小沟道长度。使用传输线方法提取 a-IGZO TFT 的有效沟道长度 (Leff)。由于氢扩散到 a-IGZO 沟道区,Leff 的降低显着取决于退火温度。从 a-IGZO TFT 的沟道电阻计算的本征迁移率与 Leff 校正的迁移率非常一致。使用传输线方法提取 a-IGZO TFT 的有效沟道长度 (Leff)。由于氢扩散到 a-IGZO 沟道区,Leff 的降低显着取决于退火温度。从 a-IGZO TFT 的沟道电阻计算的本征迁移率与 Leff 校正的迁移率非常一致。使用传输线方法提取 a-IGZO TFT 的有效沟道长度 (Leff)。由于氢扩散到 a-IGZO 沟道区,Leff 的降低显着取决于退火温度。从 a-IGZO TFT 的沟道电阻计算的本征迁移率与 Leff 校正的迁移率非常一致。
更新日期:2018-07-09
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