Double MgO based magnetic free layers are state-of-the-art solutions for providing high performance perpendicular spin-transfer torque-magnetic random access memory devices. We provide device measurements showing reduction of switching current in perpendicular magnetic tunnel junctions (p-MTJs) using non-collinear ferromagnets on the double MgO template. This structure is engineered by introducing an in-plane ferromagnetic cap, which produces in-plane stray field effects on the free layer. The non-collinear structure delivers ∼53% reduction in critical current density in STT switching without weakening the thermal stability of the devices. The advantages in device performance using non-collinearity in magnetization is sustained down to ∼20 nm MTJs. Micromagnetic simulations suggest inherent differences in the magnetization reversal process between our proposed non-collinear p-MTJ and a well-known double MgO based p-MTJ.Double MgO based magnetic free layers are state-of-the-art solutions for providing high performance perpendicular spin-transfer torque-magnetic random access memory devices. We provide device measurements showing reduction of switching current in perpendicular magnetic tunnel junctions (p-MTJs) using non-collinear ferromagnets on the double MgO template. This structure is engineered by introducing an in-plane ferromagnetic cap, which produces in-plane stray field effects on the free layer. The non-collinear structure delivers ∼53% reduction in critical current density in STT switching without weakening the thermal stability of the devices. The advantages in device performance using non-collinearity in magnetization is sustained down to ∼20 nm MTJs. Micromagnetic simulations suggest inherent differences in the magnetization reversal process between our proposed non-collinear p-MTJ and a well-known double MgO based p-MTJ.

中文翻译：

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非共线双氧化镁基垂直磁隧道结

基于双 MgO 的磁性自由层是提供高性能垂直自旋转移扭矩磁性随机存取存储设备的最先进的解决方案。我们提供的器件测量结果显示，在双 MgO 模板上使用非共线铁磁体降低了垂直磁隧道结 (p-MTJ) 中的开关电流。这种结构是通过引入一个面内铁磁帽来设计的，它在自由层上产生面内杂散场效应。非共线结构使 STT 开关中的临界电流密度降低了约 53%，而不会削弱器件的热稳定性。使用磁化中的非共线性在器件性能方面的优势持续到约 20 nm MTJ。微磁模拟表明我们提出的非共线 p-MTJ 和众所周知的双 MgO 基 p-MTJ 之间的磁化反转过程存在固有差异。双 MgO 基磁性自由层是提供高性能的最先进的解决方案垂直自旋转移力矩磁随机存取存储器件。我们提供的器件测量结果显示，在双 MgO 模板上使用非共线铁磁体降低了垂直磁隧道结 (p-MTJ) 中的开关电流。这种结构是通过引入一个面内铁磁帽来设计的，它在自由层上产生面内杂散场效应。非共线结构使 STT 开关中的临界电流密度降低了约 53%，而不会削弱器件的热稳定性。使用磁化中的非共线性在器件性能方面的优势持续到约 20 nm MTJ。微磁模拟表明，我们提出的非共线 p-MTJ 和众所周知的基于双 MgO 的 p-MTJ 之间的磁化反转过程存在固有差异。