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Superconducting nano Josephson junctions patterned with a focused helium ion beam
Applied Physics Letters ( IF 4 ) Pub Date : 2018-07-09 , DOI: 10.1063/1.5042105
Ethan Y. Cho 1 , Yuchao W. Zhou 1 , Jennifer Y. Cho 2 , Shane A. Cybart 1, 3
Affiliation  

We report the fabrication of nanoscale wires and Josephson junctions in 25 nm thick YBa2Cu3O7–δ thin films with wire widths as narrow as 50 nm. Our approach utilizes a finely focused gas field ion source from a helium ion microscope to directly modify the material on the nanometer scale to convert irradiated regions of the film into insulators. In this manner, the film remains intact and no material is milled or removed. Transport data show that the electrical properties, critical current and conductance, scale linearly with the lithographically defined width ensuring that the actual and lithographically defined dimensions are commensurate with each other. Unlike in typical ion damage proximity effect Josephson junctions, we observe a low temperature saturation of the critical current and near temperature interdependent resistance which we attribute to a narrower and more resistive barrier. Furthermore, we also demonstrate the ability to fabricate devices exhibiting high resistance and capacitance with hysteretic underdamped Josephson junction properties. This patterning technique allows for a broad range of electrical properties for Josephson devices that will expand potential applications.We report the fabrication of nanoscale wires and Josephson junctions in 25 nm thick YBa2Cu3O7–δ thin films with wire widths as narrow as 50 nm. Our approach utilizes a finely focused gas field ion source from a helium ion microscope to directly modify the material on the nanometer scale to convert irradiated regions of the film into insulators. In this manner, the film remains intact and no material is milled or removed. Transport data show that the electrical properties, critical current and conductance, scale linearly with the lithographically defined width ensuring that the actual and lithographically defined dimensions are commensurate with each other. Unlike in typical ion damage proximity effect Josephson junctions, we observe a low temperature saturation of the critical current and near temperature interdependent resistance which we attribute to a narrower and more resistive barrier. Furthermore, we also demonstrate the ability to fabricate devices exhibiting high resistance and capacitance with hy...

中文翻译:

用聚焦氦离子束图案化的超导纳米约瑟夫森结

我们报告了在 25 nm 厚的 YBa2Cu3O7-δ 薄膜中制造纳米线和约瑟夫森结,线宽窄至 50 nm。我们的方法利用来自氦离子显微镜的精细聚焦的气体场离子源,直接在纳米尺度上修改材料,将薄膜的辐照区域转化为绝缘体。以此方式,薄膜保持完整并且没有材料被研磨或去除。传输数据显示电气特性、临界电流和电导率与光刻定义的宽度成线性比例,确保实际和光刻定义的尺寸彼此相称。与典型的离子损伤邻近效应约瑟夫森结不同,我们观察到临界电流的低温饱和和接近温度的相互依赖的电阻,我们将其归因于更窄且电阻更大的势垒。此外,我们还展示了制造具有迟滞欠阻尼约瑟夫森结特性的具有高电阻和电容的器件的能力。这种图案化技术为约瑟夫森器件提供了广泛的电气特性,这将扩大潜在的应用。我们报告了在 25 nm 厚的 YBa2Cu3O7-δ 薄膜中制造纳米线和约瑟夫森结,线宽窄至 50 nm。我们的方法利用来自氦离子显微镜的精细聚焦的气体场离子源,直接在纳米尺度上修改材料,将薄膜的辐照区域转化为绝缘体。以这种方式,薄膜保持完整,没有材料被研磨或去除。传输数据显示电气特性、临界电流和电导率与光刻定义的宽度成线性比例,确保实际和光刻定义的尺寸彼此相称。与典型的离子损伤邻近效应约瑟夫森结不同,我们观察到临界电流的低温饱和和接近温度的相互依赖的电阻,我们将其归因于更窄且电阻更大的势垒。此外,我们还展示了制造具有高电阻和电容的器件的能力,并且... 与光刻定义的宽度成线性比例,确保实际和光刻定义的尺寸彼此相称。与典型的离子损伤邻近效应约瑟夫森结不同,我们观察到临界电流的低温饱和和接近温度的相互依赖的电阻,我们将其归因于更窄且电阻更大的势垒。此外,我们还展示了制造具有高电阻和电容的器件的能力,并且... 与光刻定义的宽度成线性比例,确保实际和光刻定义的尺寸彼此相称。与典型的离子损伤邻近效应约瑟夫森结不同,我们观察到临界电流的低温饱和和接近温度的相互依赖的电阻,我们将其归因于更窄且电阻更大的势垒。此外,我们还展示了制造具有高电阻和电容的器件的能力,并且...
更新日期:2018-07-09
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