Organic resistive memory devices are one of the promising next‐generation data storage technologies which can potentially enable low‐cost printable and flexible memory devices. Despite a substantial development of the field, the mechanism of the resistive switching phenomenon in organic resistive memory devices has not been clearly understood. Here, the time–dependent current behavior of unipolar organic resistive memory devices under a constant voltage stress to investigate the turn‐on process is studied. The turn‐on process is discovered to occur probabilistically through a series of abrupt increases in the current, each of which can be associated with new conducting paths formation. The measured turn‐on time values can be collectively described with the Weibull distribution which reveals the properties of the percolated conducting paths. Both the shape of the network and the current path formation rate are significantly affected by the stress voltage. A general probabilistic nature of the percolated conducting path formation during the turn‐on process is demonstrated among unipolar memory devices made of various materials. The results of this study are also highly relevant for practical operations of the resistive memory devices since the guidelines for time‐widths and magnitudes of voltage pulses required for writing and reading operation can be potentially set.

中文翻译：

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单极非易失性有机存储器件的时变电阻开关行为研究

有机电阻存储设备是有前途的下一代数据存储技术之一，可以潜在地实现低成本的可打印和灵活的存储设备。尽管该领域已取得实质性发展，但尚未清楚地了解有机电阻存储装置中的电阻切换现象的机理。在此，研究了单极性有机电阻存储器件在恒定电压应力下随时间变化的电流行为，以研究其导通过程。发现导通过程是通过一系列电流突然增加而概率性地发生的，每种电流都可能与新的导电路径形成有关。测得的导通时间值可以用Weibull分布共同描述，该分布揭示了渗透导电路径的特性。应力电压显着影响网络的形状和电流路径的形成速率。在由各种材料制成的单极存储设备中，证明了导通过程中渗透导电路径形成的一般概率性质。这项研究的结果与电阻存储设备的实际操作也高度相关，因为可以潜在地设置读写操作所需的电压脉冲的时间宽度和幅度准则。