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High‐Q and temperature‐stable microwave dielectrics in layer cofired Zn1.01Nb2O6/TiO2/Zn1.01Nb2O6 ceramic architectures
Journal of the American Ceramic Society ( IF 3.9 ) Pub Date : 2018-07-21 , DOI: 10.1111/jace.15924
Jie Zhang 1 , Yu Luo 1 , Zhenxing Yue 1 , Longtu Li 1
Affiliation  

A multilayer cofired architecture was proposed and demonstrated to achieve high‐Q and temperature‐stable microwave dielectrics in a derived system, Zn1.01Nb2O6‐TiO2. This approach could effectively allow the chemical reactions between Zn1.01Nb2O6 and TiO2 occur at a rather narrow area (~12 μm), the interfaces of heterogeneous layers, where the diffusion of Zn, Nb, and Ti could be observed. Such interfaces could act as the in situ “glues” to connect each layer well. The effects of stacking scheme and TiO2 content on the microwave dielectric properties of layered architectures were investigated systematically. The resonant frequency, Q‐factor, and electric field distribution were reported using the eigenmode solver of high‐frequency structure simulator. Among the available layer architectures, the optimized microwave dielectric characteristic was observed in Zn1.01Nb2O6/TiO2/Zn1.01Nb2O6 stacked with 0.058 mol TiO2 (~1.84 vol%). The τf can be effectively tuned to approximately +0.53 ppm/°C, and importantly, a high Q × f value ~99 500 GHz together with εr ~26.8 was achieved. This design could be beneficial for opening up new ways to develop high‐performance microwave dielectrics based on current material systems and therefore to meet with the high requirements for 5G wireless communication components and multilayer packing technology.

中文翻译:

共烧Zn1.01Nb2O6 / TiO2 / Zn1.01Nb2O6陶瓷结构中的高Q和温度稳定的微波电介质

提出并证明了多层共烧体系结构,可在派生体系Zn 1.01 Nb 2 O 6 -TiO 2中获得高Q和温度稳定的微波电介质。这种方法可以有效地使Zn 1.01 Nb 2 O 6和TiO 2之间的化学反应发生在一个相当狭窄的区域(约12μm),该区域是异质层的界面,可以观察到Zn,Nb和Ti的扩散。这样的界面可以充当就地“胶水”以很好地连接每一层。堆积方式和TiO 2的影响系统地研究了层状结构的微波介电特性的含量。使用高频结构模拟器的本征模式求解器报告了共振频率,Q因子和电场分布。在可用的层结构中,在堆叠有0.058 mol TiO 2(〜1.84 vol%)的Zn 1.01 Nb 2 O 6 / TiO 2 / Zn 1.01 Nb 2 O 6中观察到了最佳的微波介电特性。的τ ˚F可以有效地调谐到大约0.53 PPM /℃,并且重要的是,高的Q×˚F值〜99 500 GHz的连同ε - [R〜26.8达到了。此设计可能有益于开辟新方法来开发基于当前材料系统的高性能微波电介质,从而满足5G无线通信组件和多层包装技术的高要求。
更新日期:2018-07-21
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