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Photoelectrochemical properties of BiVO4 thin film photoanodes prepared by aerosol pyrolysis
Catalysis Today ( IF 5.3 ) Pub Date : 2018-07-10 , DOI: 10.1016/j.cattod.2018.07.020
Š. Paušová , M. Uriburu Gray , M. Neumann-Spallart , J. Krýsa

This study describes the preparation by aerosol pyrolysis and characterization of pure and Mo containing semiconducting BiVO4 thin films for application as a photoanode in photoassisted water electrolysis and photoelectrocatalysis.

The optimum deposition temperature was 650 °C. Pure BiVO4 films had a monoclinic distorted Scheelite structure. This polymorph has a lower bandgap (2.4 eV) than the tetragonal zircon group phase (2.9 eV), which makes it more desirable for solar irradiation based photo(electro)chemical applications. Addition of Mo (14%) led to the formation of the tetragonal Scheelite type phase and significantly increased the photocurrent (from 20 to 400 μA/cm2 and from 400 to 1100 μA/cm2 at 0.6 V and 1.2 V vs. Ag/AgCl, respectively, under AM1.5 simulated solar illumination). The IPCE (incident photon to current conversion efficiency) at 405 nm was 0.24 for backside illumination at 2 V vs. RHE.



中文翻译:

气溶胶热解法制备BiVO 4薄膜光电阳极的光电化学性能

这项研究描述了通过气溶胶热解法制备和表征的纯的和含Mo的半导体BiVO 4薄膜,这些薄膜可用作光助水电解和光电催化中的光阳极。

最佳沉积温度为650°C。纯BiVO 4薄膜具有单斜畸变的Scheelite结构。该多晶型物具有比四方锆石基团相(2.9 eV)更低的带隙(2.4 eV),这使其更适合用于基于太阳辐射的光(电)化学应用。Mo(14%)的添加导致形成了四方Scheelite型相,并显着增加了光电流(在0.6 V和1.2 V下,相对于Ag / ,从20μA/ cm 2到400μA/ cm 2,从400μA/ cm 2到1100μA/ cm 2)。 AgCl分别在AM1.5下模拟太阳光照)。对于2 V相对于RHE的背面照明,在405 nm处的IPCE(入射光子至电流转换效率)为0.24。

更新日期:2018-07-10
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