Quaternary oxides In₁₂Ti₁₀Al₂MgO₄₂ (ITAM), In₁₂Ti₁₀Al₂ZnO₄₂ (ITAZ), In₁₂Ti₁₀Ga₂MgO₄₂ (ITGM), and In₁₂Ti₁₀Ga₂ZnO₄₂ (ITGZ), were synthesized by the solid‐state reaction method and the dielectric behavior is reported. The samples were submitted to different sintering temperatures (1473‐1773 K) for 24 hours and the phase stability and microstructure were analyzed by X‐ray powder diffraction (XRD) and scanning electron microscopy (SEM). It is found that the phase decomposition occurs above of 1573 K. Microstructure images showed an increase in the grains size as sintering temperature was raised. The dielectric permittivity as a function of temperature and frequency showed acceptable dielectric constant (15‐30) and low dielectric loss (tan δ << 1) values in a wide range of temperature. The band gap obtained by the optical spectrum analysis is about 3.5 eV indicating good dielectric insulating compounds. Furthermore, the electrical conductivity, the activation energy, and the conduction mechanisms are analyzed and discussed in a whole range of temperature. The good dielectric values, ε′ (15‐20) and tan δ (~0.004), and their behavior (almost independent of the frequency and temperature) almost constant within a wide range of temperature make these quaternary oxides interesting in electroceramic applications.

中文翻译：

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四元氧化物In12Ti10A2BO42（A：Ga或Al; B：Mg或Zn）的相稳定性，微观结构和介电性能

在₁₂ Ti ₁₀ Al ₂ MgO ₄₂（ITAM），在₁₂ Ti ₁₀ Al ₂ ZnO ₄₂（ITAZ），在₁₂ Ti ₁₀ Ga ₂ MgO ₄₂（ITGM）和在₁₂ Ti ₁₀ Ga ₂ ZnO _{42中的四元}氧化物（ITGZ），是通过固态反应方法合成的，并报道了其介电行为。将样品置于不同的烧结温度（1473-1773 K）下放置24小时，并通过X射线粉末衍射（XRD）和扫描电子显微镜（SEM）分析相稳定性和微观结构。发现在高于1573 K时发生相分解。显微组织图像显示，随着烧结温度的升高，晶粒尺寸增加。介电常数随温度和频率的变化在很宽的温度范围内均显示出可接受的介电常数（15-30）和低介电损耗（tanδ<< 1）值。通过光谱分析获得的带隙为约3.5eV，表明良好的介电绝缘化合物。此外，电导率 在整个温度范围内分析和讨论了活化能和传导机理。良好的介电常数ε'（15-20）和tanδ（〜0.004），以及它们的行为（几乎与频率和温度无关）在很宽的温度范围内几乎恒定，这些四元氧化物在电陶瓷应用中引起人们的兴趣。