We demonstrate significantly enhanced performances of 1.3-μm InAs/GaAs quantum dot (QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy. Following Si doping, the ridge waveguide laser, with uncoated facets, showed a remarkably reduced continuous-wave threshold current density of 71.6 A/cm2 (14.3 A/cm2 per QD layer), compared with 167.3 A/cm2 (33.5 A/cm2 per QD layer) for an undoped device with an identical structure, measured at 20 °C. Moreover, doping improved the single-side slope efficiency from 0.28 to 0.42 W/A. In addition, the Si-doped QD laser exhibited a higher lasing temperature of up to 140 °C compared with 120 °C for the undoped QD laser.

中文翻译：

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通过直接 Si 掺杂提高 1.3-μm InAs/GaAs 量子点激光器的性能

我们证明了直接掺杂 Si 的 QD 显着增强了 1.3-μm InAs/GaAs 量子点 (QD) 激光器的性能。激光器是通过分子束外延生长的。在 Si 掺杂之后，脊形波导激光器，具有未涂层的小平面，显示出显着降低的连续波阈值电流密度 71.6 A/cm2（每 QD 层 14.3 A/cm2），与 167.3 A/cm2（每层 33.5 A/cm2）相比。 QD 层）用于具有相同结构的未掺杂器件，在 20 °C 下测量。此外，掺杂将单边斜率效率从 0.28 W/A 提高到 0.42 W/A。此外，与未掺杂的 QD 激光器的 120°C 相比，Si 掺杂的 QD 激光器表现出高达 140°C 的更高激光温度。