Middle wavelength infrared (MWIR) photodetectors have a wide range of applications, but almost all of them operate at low temperature due to the limit of materials and device structures. The capability of plasmonic structures to localize electromagnetic wave on the deep subwavelength scale provides the possibility for MWIR photodetectors operating at room temperature. Here, we report a high sensitivity room temperature MWIR photodetector which is an InAs0.91Sb0.09-based heterojunction n-i-p photodiode integrated with a Au-based two-dimensional subwavelength hole array (2DSHA). A room temperature detectivity of 0.8 × 1010 cm Hz1/2 W−1 and a response time of 600 ns are achieved. The non-cooling high performance of 2DSHA-InAs0.91Sb0.09 based heterojunction photodetectors will make their applications easier, broader, and economic.

中文翻译：

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室温等离子体增强 InAs0.91Sb0.09 基异质结 nip 中波红外光电探测器

中波长红外（MWIR）光电探测器应用范围很广，但由于材料和器件结构的限制，几乎都在低温下工作。等离子体结构在深亚波长尺度上定位电磁波的能力为 MWIR 光电探测器在室温下工作提供了可能性。在这里，我们报告了一种高灵敏度室温 MWIR 光电探测器，它是一种基于 InAs0.91Sb0.09 的异质结 nip 光电二极管，与基于 Au 的二维亚波长孔阵列 (2DSHA) 集成在一起。实现了 0.8 × 1010 cm Hz1/2 W-1 的室温探测率和 600 ns 的响应时间。基于 2DSHA-InAs0.91Sb0.09 的异质结光电探测器的非冷却高性能将使它们的应用更容易、更广泛和更经济。