High-k material based solid state incandescent devices (SSI-LEDs) have attracted intense attention as a promising candidate for future broadband light emitting devices. However, the limited understanding of the lighting mechanism hinders the further improvement of the device performance. In this work, the electrical and light emission properties of SSI-LEDs fabricated on substrates with different doping types and concentrations have been studied. It turns out that the substrate can significantly affect the device performances and even determines whether the device can work properly. The slight n-type doping of the HfO₂ layer leads to the rectifying behavior of the devices fabricated on p-type and n-type substrates, which further results in differences of the turn-on voltage and the light emission efficiency of different devices. The diffusion of Si ions into the conductive filaments consisting of oxygen vacancies is believed to be responsible for the formation of pits on the HfO₂ surface and the polarization requirement of external bias for light emission. This work provides in-depth understanding of the light emission mechanism of the SSI-LEDs, thus being of significant importance to their practical use in future white-light-emitting devices.

中文翻译：

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硅酸盐导电灯丝辅助HfO ₂高k固态白炽灯装置的宽带发光†

基于高k材料的固态白炽灯器件（SSI-LED）作为未来宽带发光器件的有希望的候选者已经引起了广泛的关注。但是，对照明机制的了解有限，阻碍了设备性能的进一步提高。在这项工作中，已经研究了在具有不同掺杂类型和浓度的基板上制造的SSI-LED的电学和发光特性。事实证明，基材会严重影响设备性能，甚至会确定设备是否可以正常工作。HfO ₂的轻微n型掺杂薄膜层导致在p型和n型衬底上制造的器件的整流行为，这进一步导致不同器件的导通电压和发光效率的差异。认为Si离子扩散到由氧空位组成的导电丝中是造成HfO ₂表面上的凹坑的形成以及发光的外部偏压的极化要求的原因。这项工作提供了对SSI-LEDs发光机理的深入了解，因此对于它们在未来的白光发射设备中的实际应用非常重要。