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Synthesis and electrical transport properties of Bi 2 O 2 Se single crystals
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2018-09-01 , DOI: 10.1016/j.jcrysgro.2018.07.004
Qianhui Mao , Xiaodong Geng , Jinfeng Yang , Junji Zhang , Shuangmei Zhu , Qiongyan Yu , Yuan Wang , Haidong Li , Ruixue Li , Haoshan Hao

Abstract we have reported the synthesis, electrical resistivity ρ (T), Hall coefficient (RH) and magnetoresistance (MR) of Bi2O2Se single crystals with layered tetragonal structure (space group I4/mmm). The lattice parameters obtained after Rietveld refinement are a = b = 3.897 A, c = 12.237 A, respectively. ρ (T) and RH measured in the temperature range from 2 K to 300 K show high carrier concentration extrinsic semiconductor behavior. At higher temperatures (130–300 K), the resistivity is dominated by phonon scattering mechanism, as manifested by ρ (T) ∝ T1.5. The magnetic field dependence of resistivity is positive in the whole temperature range. The MR at 2 K increase monotonically with magnetic field and manifest very weak saturate trend up to 9 T where it reaches its maximum value with Δ ρ xx / ρ xx ≈ 100%.

中文翻译:

Bi 2 O 2 Se 单晶的合成及电传输特性

摘要 我们报道了具有层状四方结构(空间群 I4/mmm)的 Bi2O2Se 单晶的合成、电阻率 ρ (T)、霍尔系数 (RH) 和磁阻 (MR)。Rietveld 细化后获得的晶格参数分别为 a = b = 3.897 A、c = 12.237 A。在 2 K 至 300 K 的温度范围内测量的 ρ (T) 和 RH 显示出高载流子浓度的外在半导体行为。在较高温度 (130–300 K) 下,电阻率由声子散射机制主导,如 ρ (T) ∝ T1.5 所示。在整个温度范围内,电阻率的磁场依赖性是正的。2 K 处的 MR 随磁场单调增加,并表现出非常弱的饱和趋势,达到 9 T,在 Δ ρ xx / ρ xx ≈ 100% 时达到最大值。
更新日期:2018-09-01
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