Abstract A carbon film was deposited on the inner wall of a quartz crucible by vacuum evaporation. The effects of gas pressure in the crucible on the carbon film surface morphology and the binding force between the carbon film and the inner wall of the quartz crucible were studied. When the gas pressure was increased from 4 Pa to 12 Pa, the surface roughness of the carbon film increased and large particles appeared on the surface, whereas the binding force between the carbon film and the inner wall of the crucible weakened. When the gas pressure was 12 Pa, the carbon film peeled off. GaSb crystal ingots were prepared by the vertical Bridgman method, and the effects of the carbon film on the ingots’ microstructure and properties were studied. When there was no carbon film on the inner wall of the crucible, the dislocation density of the crystals was the highest, their hardness and resistivity values were the largest, and their carrier mobility was the lowest. When the gas pressure was 4 Pa, the crystal surface was flat and the dislocation density of the crystals significantly decreased. The hardness and resistivity values also decreased and the carrier mobility significantly increased. When the gas pressure was 12 Pa, the hardness and resistivity values of the crystals gradually increased, whereas the carrier mobility gradually decreased.

中文翻译：

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安瓿包覆技术对碳膜和GaSb晶体的影响

摘要 通过真空蒸发在石英坩埚内壁沉积一层碳膜。研究了坩埚内气压对碳膜表面形貌及碳膜与石英坩埚内壁结合力的影响。当气压从4Pa增加到12Pa时，碳膜表面粗糙度增大，表面出现大颗粒，而碳膜与坩埚内壁的结合力减弱。当气压为12Pa时，碳膜剥落。采用立式布里奇曼法制备了GaSb晶锭，研究了碳膜对晶锭微观结构和性能的影响。当坩埚内壁没有碳膜时，晶体的位错密度最高，硬度和电阻率值最大，载流子迁移率最低。当气压为 4 Pa 时，晶体表面平坦，晶体的位错密度显着降低。硬度和电阻值也降低，载流子迁移率显着增加。当气压为 12 Pa 时，晶体的硬度和电阻率逐渐升高，而载流子迁移率逐渐降低。硬度和电阻值也降低，载流子迁移率显着增加。当气压为 12 Pa 时，晶体的硬度和电阻率逐渐升高，而载流子迁移率逐渐降低。硬度和电阻值也降低，载流子迁移率显着增加。当气压为 12 Pa 时，晶体的硬度和电阻率逐渐升高，而载流子迁移率逐渐降低。