Abstract In this work, we have investigated the growth of highly n-doped gallium arsenide (GaAs) and gallium indium phosphide (GaInP) with tellurium (Te) by metal organic vapor phase epitaxy (MOVPE) using diisopropyl telluride (DIPTe), aiming at fabricating high performances tunnel junctions. A parametric study is performed in order to optimize the n++-type doping. Concentrations above 2.7 × 1019 cm−3 were achieved in both GaAs and GaInP layers. Using these Te-doped layers, we fabricated both n on p (n/p) and p on n (p/n) tunnel junctions. The p/n tunnel junction required additional annealing steps during growth, due to memory effect and surfactant properties of Te. We characterized GaAs/GaAs, GaAs/AlGaAs and AlGaAs/GaInP tunnel junctions with peak tunneling current densities as high as 250, 3000 and 1500 A/cm2 respectively. These tunnel junction performances are suitable for multijunction solar cells operating under high concentration.

中文翻译：

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使用二异丙基碲化物 (DIPTe) 对 GaAs 和 GaInP 进行 Te 掺杂，用于隧道结应用

摘要 在这项工作中，我们研究了使用二异丙基碲化物 (DIPTe) 通过金属有机气相外延 (MOVPE) 生长高 n 掺杂砷化镓 (GaAs) 和含碲 (Te) 的磷化镓 (GaInP)，旨在制造高性能隧道结。进行参数研究以优化 n++ 型掺杂。在 GaAs 和 GaInP 层中都实现了高于 2.7 × 1019 cm-3 的浓度。使用这些 Te 掺杂层，我们制造了 n on p (n/p) 和 p on n (p/n) 隧道结。由于 Te 的记忆效应和表面活性剂特性，p/n 隧道结在生长过程中需要额外的退火步骤。我们表征了峰值隧道电流密度分别高达 250、3000 和 1500 A/cm2 的 GaAs/GaAs、GaAs/AlGaAs 和 AlGaAs/GaInP 隧道结。