We report a study of the relationship between oxide microstructure at the scale of tens of nanometres and resistance switching behaviour in silicon oxide. In the case of sputtered amorphous oxides, the presence of columnar structure enables efficient resistance switching by providing an initial structured distribution of defects that can act as precursors for the formation of chains of conductive oxygen vacancies under the application of appropriate electrical bias. Increasing electrode interface roughness decreases electroforming voltages and reduces the distribution of switching voltages. Any contribution to these effects from field enhancement at rough interfaces is secondary to changes in oxide microstructure templated by interface structure.

中文翻译：

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基于氧化还原的电阻开关中结构与功能之间的相互作用

我们报告了数十纳米规模的氧化物微观结构与氧化硅中的电阻切换行为之间的关系的研究。在溅射无定形氧化物的情况下，柱状结构的存在可以通过提供缺陷的初始结构化分布来实现有效的电阻切换，所述缺陷可以充当在适当的电偏压下形成导电氧空位链的前体。电极界面粗糙度的增加会降低电铸电压并降低开关电压的分布。粗糙界面处的场增强对这些效应的任何贡献都是由界面结构模板化的氧化物微结构变化的次要因素。